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ALD machining equipment and machining method

A technology of processing equipment and heaters, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of long cycle, difficult quality assurance, waste of precursor sources, etc.

Inactive Publication Date: 2021-05-28
ADVANCED MATERIALS TECH & ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention provides an ALD processing equipment and processing method, which solves or partially solves the technical problems of poor uniformity of deposited film in the prior art, difficult quality assurance, low film forming efficiency, long cycle, and waste of precursor source

Method used

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  • ALD machining equipment and machining method
  • ALD machining equipment and machining method
  • ALD machining equipment and machining method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054]This example discloses an ALD processing apparatus.

[0055]figure 1 Structure of an ALD processing apparatus disclosed in Example 1, combinedfigure 1 The ALD processing apparatus of the present embodiment includes reactor a, lifting device B, and a feed chamber C.

[0056]Combinefigure 1 The reactor A of the present embodiment includes a vacuum chamber 1 and a reaction chamber 2, and the reaction chamber 2 is built into the vacuum chamber 1,figure 2 A schematic structural diagram of the vacuum chamber of the present embodiment,image 3 Structure of the reaction chamber of the present embodiment, combinedFigure 1 - Figure 3The reactive chamber 2 of the present embodiment is open, and a delivery port is provided on the side of the vacuum chamber 1.

[0057]Combinefigure 1 The lifting device B of the present embodiment is disposed on the reactor A, and the output end of the lifting device B is vertically telescopically, and a cover 4 is provided on the output of the lifting device B, and ...

Embodiment 2

[0061]This embodiment provides a reaction chamber for use in an ALD processing apparatus shown in Example 1.

[0062]Figure 4 Structure of the reaction chamber of the present embodiment, combinedimage 3 as well asFigure 4 The bottom portion of the reaction chamber 2 of the present embodiment is provided with an intake passage 8 and an air passage 9, the intake passage 8, and the air passage 9 to be opposed to the center line of the top of the reaction chamber 2.

[0063]In this embodiment, the precursor source is injected into the reaction chamber 2 from the intake passage 8 of the reaction chamber 2, and is discharged from the air passage 9 of the reaction chamber 2, due to the intake passage 8 and the air passage 9 The centerline of the top of the reaction chamber 2 is disposed, so that the fluid field in the reaction chamber 2 is a laminar flow, and the intake and extravasation of the precursor source are in direct contact with the reaction chamber, avoiding the precursor source The ri...

Embodiment 3

[0069]This embodiment provides a reaction chamber, suitable for an ALD processing apparatus shown in Example 1 or 2.

[0070]Figure 5 The structural schematic view of the reaction chamber of Example 3, the reactive chamber shown in the present embodiment and the reaction chamber shown in Example 2 is that two uniform plate 10 is provided in the reaction chamber 2, The two homogeneous plates 10 are disposed opposite the center line of the top of the reaction chamber 2, and the two uniform plate 10 is disposed between the intake passage 8 and the air passage 9, and the two uniform plate 10 divide the reaction chamber into The intake chamber, the reaction chamber, and the vent chamber are provided with a plurality of through holes on each of the homogeneous plates 10.

[0071]The precursor source can enter into the intake chamber by the intake passage 8, and then passes into the reaction chamber by the homogenizing plate 10 on the same side of the intake chamber, and the substrate is purged,...

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Abstract

The invention relates to ALD machining equipment and a machining method. A reactor of the processing equipment comprises a vacuum chamber and a reaction chamber, the reaction chamber is arranged in the vacuum chamber, the bottom of the reaction chamber is open, the top of the reaction chamber is provided with an air inlet channel and an air outlet channel, the air inlet channel and the air outlet channel are oppositely arranged relative to the center line of the top of the reaction chamber, and a conveying port is formed in the side face of the vacuum chamber. A lifting device is arranged on the reactor, the output end of the lifting device stretches out and draws back in the vertical direction, a sealing cover is arranged at the output end of the lifting device, the sealing cover is arranged below the reaction chamber, and the sealing cover can operably seal the bottom of the reaction chamber. A feeding chamber is arranged on the side portion of the reactor, a sealing door capable of opening and closing the conveying port is arranged between the feeding chamber and the reactor, a conveying device is arranged in the feeding chamber, and the conveying device can operably transfer a base body to the sealing cover. According to the ALD machining equipment and the machining method, the forming quality and consistency of a deposited film can be ensured.

Description

Technical field[0001]The present invention relates to the field of semiconductor nano film deposition, and more particularly to an ALD processing apparatus and a machining method.Background technique[0002]With the continuous improvement of IC complexity, the characteristic size of metal-oxide-semiconductor field effect transistor devices in silicon-based semiconductor integrated circuits will reach nanometers in accordance with the international semiconductor technology development road maps announced by the famous Moore Law and International Semiconductor Industry Association. scale. Atomic layer deposition, ALD has excellent three-dimensional conformation, large-area uniformity and precise subharmonic membrane thickness control, is favored by the microelectronics industry and nanotechnology.[0003]In the prior art, the technical solution of atomic layer deposition processing is to place the substrate in a sealed reactor, and then pass through the gas phase precursor source to the r...

Claims

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Application Information

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IPC IPC(8): C23C16/455
CPCC23C16/45504C23C16/45544
Inventor 万军王辉廖海涛王斌
Owner ADVANCED MATERIALS TECH & ENG INC
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