Gallium oxide nanotube and preparation method and application thereof

Abstract

The invention discloses a gallium oxide nanotube as well as a preparation method and application thereof. The preparation method comprises the following steps: arranging a catalyst on a substrate, and growing and forming a gallium oxide nanowire on the substrate by using the catalyst; removing the catalyst at the top end of the gallium oxide nanowire, or enabling the catalyst at the top end of the gallium oxide nanowire to be naturally exhausted in the nanowire growth process; and arranging metal gallium in the center of the top end face of the gallium oxide nanowire, and then corroding the interior of the gallium oxide nanowire through self-reaction corrosion of the metal gallium and gallium oxide, so as to obtain the gallium oxide nanotube with the hollow interior. According to the preparation method of the gallium oxide nanotube provided by the embodiment of the invention, the preparation of the high-crystal-quality nanotube array vertical to the surface of the substrate is realized by utilizing a gallium self-reaction corrosion technology, the pollution of other materials to the nanotube is avoided, and the gallium oxide nanotube can be applied to the fields of ultraviolet light electron, gas detection or adsorption and the like.

Description

technical field [0001] The invention relates to a preparation method of a gallium oxide nanotube, in particular to a gallium oxide nanotube and its preparation method and application, which belong to the technical field of semiconductors. Background technique [0002] With the development of semiconductor technology, ultra-wide bandgap semiconductor—gallium oxide (Ga 2 o 3 ) has become a new research favorite due to its excellent material and device properties. Among the five isomers (α, β, ε, δ, γ) of gallium oxide materials, the β phase is the most stable configuration. The β-phase gallium oxide can be converted from other metastable phase gallium oxide in the air for a long enough time at high temperature. Due to its excellent thermal and chemical stability, β-Ga 2 o 3 It has become one of the hot materials in device application research. Due to β-Ga 2 o 3 The bandgap width of semiconductor materials is about 4.9eV, and the breakdown field strength can be as high a...

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Problems solved by technology

[0006] a. Material pollution: This method will inevitably lead to β-Ga 2 o 3 Nanotubes are contaminated by graphite powder;

[0007] b. Different orientations: β-Ga prepared by high temperature sintering 2 o 3 Nanotubes, the orientation of nanotubes cannot be controlled, and the device performance based on a single nanotube has poor repeatability, poor uniformity, and batch preparation is difficult;

[0008] c. It is difficult to prepare array devices: β-Ga prepared by high temperature sintering 2 o 3 The different orientations of nanotubes lead to difficulties in vertical planarization, and the position control of functions such as pn junctions and heterojunctions is difficult to grasp, resulting in complex processes and difficult implementation, which limits the preparation and application of nanotube array devices

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