Low-temperature sintered microwave dielectric material Mg[2-x]Co[x]V[2]O[7] and preparation method thereof

Abstract

The invention belongs to the field of electronic ceramics and manufacturing thereof, and provides a low-temperature sintered microwave dielectric material and a preparation method thereof. The low-temperature sintering microwave dielectric material is Mg[2-x]Co[x]V[2]O[7] (x is larger than or equal to 0.5 and smaller than or equal to 1.0), the crystal phase of the low-temperature sintering microwave dielectric material is Mg2V2O7, the crystal structure is a monoclinic crystal structure, and cobalt ions and magnesium ions jointly occupy A sites. According to the invention, the addition of cobalt ions enables the crystal phase Mg2V2O7 of the microwave medium to be converted from a triclinic structure to a monoclinic structure, the crystal grains grow up, and the atom accumulation rate is improved, so that the Q*f value is greatly improved; and meanwhile, low-temperature sintering at 860-870 DEG C is realized, and the problem that the sintering temperature of the microwave dielectric material is too high is solved. The low-temperature sintered microwave dielectric material provided by the invention has excellent microwave dielectric properties at the sintering temperature of 860-870 DEG C: the dielectric constant is 8-9, the Q*f value is 66000-72000 GHz, and the temperature coefficient of resonance frequency is -30 to -26 ppm / DEG C; in addition, the low-temperature sintering microwave dielectric material is simple in preparation process, low in production cost and beneficial to industrial production.

Description

technical field [0001] The invention belongs to the field of electronic ceramics and its manufacture, and relates to microwave dielectric ceramic Mg 2 V 2 o 7 Doping modification, specifically related to a low-temperature sintered microwave dielectric material Mg 2-x co x V 2 o 7 and its preparation method. Background technique [0002] Low temperature co-fired ceramics (LTCC) technology has been widely used in the field of microwave device preparation, such as mobile phones, satellite broadcasting, radar and so on. Microwave dielectric materials used in practice need to have low dielectric loss, appropriate dielectric constant and near-zero resonant frequency temperature coefficient. MgO-V 2 o 5 The vanadate series has attracted widespread attention due to its inherent low sintering temperature and excellent microwave properties. Joung et al published an article "Formation and Microwave Dielectric Properties of the Mg 2 V 2 o 7 Ceramics". In this paper, Mg was ...

AI Technical Summary

Problems solved by technology

In this paper, the solid-state reaction method was used to prepare Mg 2 V 2 o 7 Microwave dielectric ceramics whose microwave dielectric properties are ε r =10.5, Q×f=58275GHz, τ f =-26.9ppm / ℃, the sintering temperature is still high, and the microwave dielectric properties need to be improved

Images