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ALD machining equipment and method

A processing equipment and heater technology, which is applied in metal material coating technology, gaseous chemical plating, coating, etc., can solve the problems of poor uniformity of deposition film, waste of precursor source, and difficulty in quality assurance, and achieve short cycle time, The effect of improving utilization rate and reducing volume

Inactive Publication Date: 2021-06-04
ADVANCED MATERIALS TECH & ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention provides an ALD processing equipment and processing method, which solves or partially solves the technical problems of poor uniformity of deposited film in the prior art, difficult quality assurance, low film forming efficiency, long cycle, and waste of precursor source

Method used

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  • ALD machining equipment and method
  • ALD machining equipment and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] This embodiment discloses an ALD processing equipment.

[0048] figure 1 It is a structural schematic diagram of a kind of ALD processing equipment of the present embodiment, combined with figure 1 , the ALD processing equipment of this embodiment includes a reactor and a conveying device.

[0049] combine figure 1 , the reactor of this embodiment includes a vacuum chamber 1 and a reaction chamber 2, and the reaction chamber 2 is built in the vacuum chamber 1.

[0050] figure 2 It is a structural schematic diagram of the vacuum chamber of this embodiment, image 3 It is a structural schematic diagram of the reaction chamber of the present embodiment, combined with Figure 1-Figure 3, the side wall of the reaction chamber 2 of the present embodiment is provided with a first feed port 3, and the side wall of the vacuum chamber 1 is provided with a second feed port 4, and the first feed port and the second feed port are located at the side of the reactor. same side....

Embodiment 2

[0054] This embodiment provides a reaction chamber suitable for the ALD processing equipment shown in Embodiment 1.

[0055] Figure 4 It is a schematic top view of the reaction chamber of this embodiment, combined with image 3 as well as Figure 4 The bottom of the reaction chamber 2 in this embodiment is provided with an inlet channel 9 and an outlet channel 10 , and the inlet channel 9 and the outlet channel 10 are arranged opposite to each other at the center line of the bottom of the reaction chamber 2 .

[0056] During specific implementation, the precursor source is injected into the reaction chamber 2 from the inlet channel 9 of the reaction chamber 2, and is discharged from the gas outlet channel 10 of the reaction chamber 2, because the gas inlet channel 9 and the gas outlet channel 10 react with each other. The center line of the bottom of the chamber 2 is relatively arranged, therefore, the fluid field in the reaction chamber 2 is a laminar flow, and the intake ...

Embodiment 3

[0061] This embodiment provides a reaction chamber suitable for the ALD processing equipment shown in Embodiment 1 or 2.

[0062] Figure 5 It is a structural schematic diagram of the reaction chamber of Example 3. The difference between the reaction chamber shown in this embodiment and the reaction chamber shown in Example 2 is that two gas uniform plates 11 are arranged in the reaction chamber 2, Two gas uniform plates 11 are oppositely arranged with the center line of the bottom of the reaction chamber 2, and the two gas uniform plates 11 are arranged between the inlet channel 9 and the gas outlet channel 10, and the two gas homogenizer plates 11 divide the reaction chamber along the first The two directions are divided into an air inlet chamber, a reaction chamber and an air outlet chamber, and each gas uniform plate 11 is provided with a plurality of through holes.

[0063] The precursor source can enter the inlet chamber through the inlet channel 9, and then enter the r...

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Abstract

The invention relates to ALD machining equipment and method. A reactor of the machining equipment comprises a vacuum chamber and a reaction chamber, the reaction chamber is arranged in the vacuum chamber, an air inlet channel and an air outlet channel are formed in the bottom of the reaction chamber and are oppositely arranged relative to the center line of the bottom of the reaction chamber, and a first material opening is formed in the side wall of the reaction chamber. A second material opening is formed in the side wall of the reaction chamber, the first material opening and the second material opening are located in the same side of the reactor, a conveying device is arranged on the outer side of the reactor and comprises a conveying mechanism, a first sealing door for sealing the first material opening and a second sealing door for sealing the second material opening. According to the ALD machining equipment and method, the forming quality and consistency of a deposited film are guaranteed, the film forming efficiency is high, the period is short, the utilization rate of a precursor source is increased, and the ALD machining equipment is suitable for batch production and has good practical value.

Description

technical field [0001] The invention relates to the technical field of semiconductor nano film deposition, in particular to an ALD processing equipment and a processing method. Background technique [0002] With the continuous improvement of IC complexity, according to the famous Moore's Law and the international semiconductor technology development roadmap published by the International Semiconductor Industry Association, the characteristic size of metal-oxide-semiconductor field effect transistor devices in silicon-based semiconductor integrated circuits will reach nanometers scale. Atomic Layer Deposition (ALD) has the characteristics of excellent three-dimensional conformality, large-area uniformity and precise sub-monolayer film thickness control, and is favored by the microelectronics industry and nanotechnology. [0003] In the prior art, the technical scheme of atomic layer deposition processing is: place the substrate in a sealed reactor, and then alternately pass ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
CPCC23C16/45504C23C16/45544
Inventor 万军王辉廖海涛王斌
Owner ADVANCED MATERIALS TECH & ENG INC
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