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Solar cell and preparation method thereof

A technology of solar cells and solar cells, applied in the field of solar cells, can solve the problems of carrier generation, recombination centers, and limited effects, and achieve the effects of low cost, simple manufacturing process, and increased thickness

Active Publication Date: 2021-06-04
ZHONGSHAN DEHUA CHIP TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Although the specular reflection layer made of metal can improve the photoelectric conversion efficiency of flexible GaAs solar cells to a certain extent, it will generate carrier recombination centers at the interface with the battery contact layer, which will cause parasitic losses.
Therefore, the effect of the specular reflection layer on the improvement of the photoelectric conversion efficiency of flexible GaAs solar cells is limited.

Method used

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  • Solar cell and preparation method thereof
  • Solar cell and preparation method thereof

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Experimental program
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Embodiment 1

[0084] In this embodiment, a solar cell is prepared, and the specific process is as follows:

[0085] S1. Epitaxially grow AlAs sacrificial layer, N-type GaAs contact layer, GaInP battery, first tunnel junction, GaAs battery layer, second tunnel junction, lattice buffer layer, GaInAs battery and P-type GaInAs contact layer on GaAs substrate in sequence ;

[0086] S2. On the surface of the P-type GaInAs contact layer, use photolithography to make a trench pattern in the shape of an isosceles triangle with a base angle of 15°, and protect the area outside the trench pattern; then dry-etch the P-type GaInAs Contact layer, get groove, clean and remove photoresist;

[0087] S3. Photolithographic protection of the surface of the component obtained in step S2, the area outside the groove, the material in the area where the groove is located is silicon dioxide, the thickness is 150nm back insulating layer, the setting method is evaporation, and then the photoresist is removed by clea...

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Abstract

The invention discloses a solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The solar cell comprises cell bodies which are stacked in sequence; a P-type contact layer, far away from one side surface of the cell body, and being provided with a groove; a back insulating layer, arranged in the groove; and a back metal layer, provided with teeth matched with the grooves. According to the solar cell, due to the fact that the partially-covered back insulating layer is arranged between the P-type contact layer and the back metal layer, parasitic loss on a contact interface of the P-type contact layer and the back metal layer is reduced; due to the non-planar structure of the P-type contact layer, the back insulating layer and the back metal layer, the optical path length of light in the absorption layer is increased, and the photoelectric conversion efficiency of the cell is improved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a solar cell and a preparation method thereof. Background technique [0002] Gallium arsenide is a semiconductor material with a wide band gap. Compared with silicon solar cells, solar cells based on gallium arsenide have better spectral responsivity and space solar spectrum matching ability, and are resistant to high temperatures. Compared with rigid GaAs solar cells, flexible GaAs solar cells have the advantages of high conversion efficiency, flexibility, light weight and high power-to-weight ratio. Therefore, flexible gallium arsenide solar cells can be used in the fields of automobiles, high-altitude and long-endurance drones, consumer electronics, the Internet of Things, wearable devices, and space vehicles. [0003] In order to further improve the photoelectric conversion efficiency of flexible gallium arsenide solar cells, researchers usually deposit a th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/0236H01L31/18
CPCH01L31/02168H01L31/02167H01L31/02366H01L31/184Y02P70/50Y02E10/544
Inventor 何键华杨文奕杜伟王硕
Owner ZHONGSHAN DEHUA CHIP TECH CO LTD
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