A Broadband High Efficiency Microwave Power Amplifier

Abstract

The invention discloses a broadband high-efficiency microwave power amplifier, which includes an input single-end to balance matching network, a first broadband high-gain amplifying network, a second broadband high-gain amplifying network and an output balance-to-single-end matching network. The core structure of the invention is The first broadband high gain amplifying network and the second broadband high gain amplifying network have high power and high gain characteristics, and at the same time, the input single-ended to balanced matching network and the output balanced to single-ended matching network have good low insertion loss in the microwave frequency band. And broadband standing wave matching characteristics, so that the whole power amplifier has obtained good high gain, high efficiency, good standing wave characteristics and high power output capability.

Description

technical field [0001] The invention relates to the field of field effect transistor radio frequency power amplifiers and integrated circuits, in particular to a broadband high-efficiency microwave power amplifier applied to a transmitting module of a radio frequency microwave terminal transceiver. Background technique [0002] With the rapid development of wireless communication systems and RF microwave circuits, RF front-end transceivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs RF and microwave power amplifiers for transmitters with high output power, high gain, high efficiency, and low cost. However, when the integrated circuit technology is used to design and realize the RF and microwave power amplifier chip circuit, its performance and cost are restricted to a certain extent, which is mainly reflected in the limited ability of high power and high efficiency. The typical po...

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Problems solved by technology

However, when integrated circuit technology is used to design and implement radio frequency and microwave power amplifier chip circuits, its performance and cost are subject to certain constraints, mainly reflected in the limited ability of high power and high efficiency. Typical power amplifiers adopt a multi-channel parallel structure, or It is a distributed structure. The combined efficiency of these two structures is limited, resulting in a part of the power loss in the combined network, which limits the high power and high efficiency capabilities.

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