Unlock instant, AI-driven research and patent intelligence for your innovation.

Equipped with nmos amplifier, the pixel circuit of analog liquid crystal on silicon display chip and its driving method can be measured

A silicon-based liquid crystal and display chip technology, applied in instruments, static indicators, nonlinear optics, etc., can solve problems such as inability to judge the normal operation of pixels, lack of electrical signal paths, and inability to confirm the integrity of output signals of pixel output electrodes.

Active Publication Date: 2022-04-22
NANKAI UNIV
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Conventional analog liquid crystal-on-silicon display chips usually have a defect in the pixel circuit: the lack of an electrical signal path in the pixel circuit structure to detect the working status of the pixel circuit, especially the inability to confirm the integrity of the output signal of the pixel output electrode, resulting in the inability to distinguish each pixel. Is it working

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Equipped with nmos amplifier, the pixel circuit of analog liquid crystal on silicon display chip and its driving method can be measured
  • Equipped with nmos amplifier, the pixel circuit of analog liquid crystal on silicon display chip and its driving method can be measured
  • Equipped with nmos amplifier, the pixel circuit of analog liquid crystal on silicon display chip and its driving method can be measured

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0082] Attached belowfigure 1 The technology of the present invention is described in further detail:

[0083] The configuration NMOS amplifier of the present invention can measure the pixel circuit of the analog silicon-based liquid crystal display chip mainly by the 1st-PMOS transistor 1, the 1st-MIM capacitor 45, the 1st-NMOS transistor 39, the 3rd-NMOS transistor 49, the 5th- NMOS transistor 51, 3rd-PMOS transistor 9 and 2nd-PMOS transistor 24, 2nd-MIM capacitor 28, 2nd-NMOS transistor 16, 4th-NMOS transistor 34, 6th-NMOS transistor 54, 4th-PMOS The tube 35 and the parasitic capacitor 31 of the pixel output electrode are composed of a MOS tube with an operating voltage in the range of 2.5V to 6.5V, an MIM capacitor, and a pixel output electrode 36, and the area of ​​the pixel output electrode 36 is not less than 85% of the silicon base area occupied by the pixel circuit. %, and the NMOS amplifier can be configured to measure the analog type liquid crystal on silicon displa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Equipped with NMOS amplifiers, it can measure the analog silicon-based liquid crystal display chip pixel circuit and its driving method. It belongs to the application field of silicon-based display chip integrated circuits of integrated circuit technology. It is composed of 10 MOS transistors, 2 MIM capacitors, and 1 parasitic capacitor. Silicon-based active addressing matrix pixel circuit, the parasitic capacitor of the pixel output electrode is composed of MOS transistors, MIM capacitors, and pixel output electrodes with an operating voltage in the range of 2.5V to 6.5V, and the area of ​​the pixel output electrode is not less than the area occupied by the pixel circuit. 85% of the base area. The effect of the present invention is to realize the function of testing the output level of each pixel, to avoid the crosstalk phenomenon between the input signal storage MIM capacitor and the parasitic capacitor of the pixel output electrode, and to be completely compatible with the conventional 2.5V-6.5V MOS semiconductor chip The production process matches.

Description

technical field [0001] The invention belongs to the application field of silicon-based display chip integrated circuits of integrated circuit technology, in particular to a pixel circuit field of measurable analog silicon-based liquid crystal display chips. Background technique [0002] Monocrystalline silicon planar device manufacturing technology is integrated with liquid crystal (LCD, Liquid Crystal Display) technology, organic light-emitting diode (OLED, Organic Light-Emitting Diode) technology and other active or passive display technologies to produce various silicon-based displays. For example, the silicon-liquid crystal-glass "sandwich" structural device technology combined with liquid crystal display technology produces a new type of reflective LCD display device. It first uses metal oxide semiconductors (metal oxide semiconductors) on single crystal silicon wafers. MOS (Metal Oxide Semiconductor) process to manufacture a silicon substrate containing an active addre...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/133G02F1/1362G09G3/00G09G3/36
CPCG02F1/13306G02F1/136286G02F1/136213G09G3/36G09G3/006
Inventor 代永平代玉刘艳艳高健珍
Owner NANKAI UNIV