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Stacked packaging structure and packaging method

A packaging structure and packaging method technology, applied in the direction of semiconductor/solid-state device components, semiconductor devices, electrical components, etc., can solve the problems of cracks, delamination at the interface of three-layer stack structure, and different degrees of expansion or contraction. , to increase the contact area, prevent delamination or cracks, and increase the adhesion

Pending Publication Date: 2021-06-11
JCET GROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a package-on-package structure and packaging method to solve the problem of expansion or contraction of the rewiring layer and two dielectric layers due to the expansion or contraction of the structural materials in the thermal cycle process and reliability process of the current package-on-package structure The problem of delamination or cracks at the junction of the three-layer stacked structure caused by different

Method used

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  • Stacked packaging structure and packaging method
  • Stacked packaging structure and packaging method
  • Stacked packaging structure and packaging method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Such as figure 1 As shown, the active surface 91 of the chip 9 has a three-layer stacked structure. The active surface 91 is also provided with a metal pad 95 and a protection layer 93 . The metal pad 95 is exposed outside the protection layer 93 .

[0058] The first dielectric layer 21 is disposed above the active surface 91 of the chip 9 ; the first dielectric layer 21 is also provided with an opening to expose at least part of the metal pad 95 .

[0059] The redistribution layer 4 is disposed above the first dielectric layer 21; the redistribution layer 4 is electrically connected to the exposed part of the metal pad 95 through the opening provided by the first dielectric layer 21; the redistribution layer 4 is provided with a first metal The layer opening 41 , the first metal layer opening 41 penetrates the redistribution layer 4 along the material thickness direction, exposing at least part of the surface of the first dielectric layer 21 .

[0060] The surface of ...

Embodiment 2

[0063] Such as figure 2 As shown, similarly, the active surface 91 of the chip 9 has a three-layer stacked structure, and the active surface 91 is also provided with a metal pad 95 and a protection layer 93 , and the metal pad 95 is exposed outside the protection layer 93 .

[0064] Different from the first embodiment, in this embodiment, the first groove 211 and the first metal layer have the same width, that is, the boundary of the first groove 211 is flush with the boundary of the first metal layer, and both can be simultaneously It is formed by laser or etching, and the processing is convenient and the process is simple.

Embodiment 3

[0066] Such as image 3 As shown, similarly, the active surface 91 of the chip 9 has a three-layer stacked structure, and the active surface 91 is also provided with a metal pad 95 and a protection layer 93 , and the metal pad 95 is exposed outside the protection layer 93 .

[0067] The difference from the first embodiment is that in this embodiment, an under-ball metal layer 6 is formed in the second dielectric layer opening 221, and after the under-ball metal layer 6 passes through or passes through the second dielectric layer opening 221, it is connected with The lower redistribution layer 4 is electrically connected.

[0068] Metal solder balls such as solder balls 8 are formed by soldering on the UBM layer 6 , so that the solder balls 8 are electrically connected to the UBM layer 6 .

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Abstract

The invention relates to a stacked packaging structure, and the structure comprises a chip, and a first dielectric layer is arranged on the active surface of the chip; a rewiring layer is arranged on the first dielectric layer, a first metal layer opening is formed in the rewiring layer, and at least part of the first dielectric layer is exposed out of the first metal layer opening; a second dielectric layer is arranged on the rewiring layer; a first groove is further formed in the surface of the first dielectric layer, the first groove is communicated with the first metal layer opening, and the second dielectric layer is connected with the first dielectric layer through the first metal layer opening and the first groove. Through the arrangement, the problem that layering or cracks are easily generated at the junction of a three-layer stacked structure due to different expansion or contraction degrees of structural materials of the rewiring layer and the two dielectric layers in a thermal cycle process and a reliability process of an existing stacked packaging structure can be solved.

Description

technical field [0001] The invention relates to the field of packaging technology, in particular to a stacked packaging structure and a packaging method. Background technique [0002] As the main method of packaging high-density integration at present, stacked packaging has received more and more attention. Chip stacking is one of the main ways to improve the high density of electronic packaging. Stacked packaging technology has been widely developed and applied in the industry. [0003] In the stacked packaging structure of the prior art, metal layers such as redistribution layers are arranged between two layers of organic dielectric passivation layers, that is, the redistribution layer covers the first dielectric layer, and the second dielectric layer covers the redistribution layers. layer, forming a three-layer stacked package structure. [0004] In the thermal cycle process and reliability process, after the redistribution layer and the two dielectric layers are affect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/498H01L23/31
CPCH01L23/49816H01L23/49822H01L23/49827H01L23/49838H01L23/3128H01L2224/11
Inventor 林耀剑
Owner JCET GROUP CO LTD
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