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Capacitive RF MEMS switch with high reliability

A reliable and capacitive technology, applied in circuits, relays, electrical components, etc., can solve the problems of low power, low isolation, poor reliability, etc., and achieve the effect of high service life, high isolation, and high operating power

Active Publication Date: 2021-06-25
RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to provide a highly reliable capacitive RF MEMS switch to solve the technical problems of poor reliability, low isolation and low power in the prior art

Method used

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  • Capacitive RF MEMS switch with high reliability
  • Capacitive RF MEMS switch with high reliability
  • Capacitive RF MEMS switch with high reliability

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Please also refer to figure 1 and Figure 4 , the high-reliability capacitive RF MEMS switch provided by the present invention will now be described. The high-reliability capacitive RF MEMS switch includes a substrate 1, a driving part 2 arranged inside the substrate 1, a transmission part 3 and a sliding part 4 arranged on the substrate 1, and the sliding part 4 consists of The driving part 2 is driven to realize plane movement on the base 1 . Both the driving component 2 and the transmission component 3 are arranged inside the base 1 , and the driving component 2 and the transmission component 3 are located at the same height of the base 1 . Preferably, the driving component 2 and the transmission component 3 need to be arranged alternately in the horizontal layout, and the two cannot overlap each other, so as not to affect the driving or capacitive coupling.

[0055] Wherein, the two sides of the substrate 1 are respectively the input side 11 and the output side 1...

Embodiment 2

[0097] see figure 2 , as another specific implementation of the high-reliability capacitive RF MEMS switch provided by the present invention, the difference between this embodiment and Embodiment 1 is that the second driving component 22 is connected to the output part 32 , the first driving assembly 21 and the input part 31 are separated, and at this time the second driving assembly 22 and the output part 32 are the same part, which can realize simultaneous processing, the structure is simpler, and the process difficulty is lower. At the same time, the areas of the first driving component 21 and the second driving component 22 are different, the coupling capacitance is increased, the operating frequency range of the RF MEMS switch is widened, and the insertion loss is reduced.

Embodiment 3

[0099] refer to image 3 , as another specific implementation of the high-reliability capacitive RF MEMS switch provided by the present invention, the difference between this embodiment and Embodiment 1 is that: the side of the output part 32 close to the input part 31 is provided with An extension part 34, the extension part 34 is in communication with the output part 32; or, the side of the input part 31 close to the output part 32 is provided with an extension part 34, and the extension part 34 is connected to the input part 31 connected. An extension part 34 is set on one side of the output part 32 or the input part 31, so that the cross-sectional areas of the input part 31 and the output part 32 are not completely equal. Part 32 forms capacitances that are not exactly the same in magnitude, which can increase transmission capacitance and reduce insertion loss.

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Abstract

The invention provides a capacitive RF MEMS switch with high reliability. The switch comprises a substrate, a driving part arranged in the substrate, a sliding part arranged on the substrate and a transmission part arranged in the substrate, the sliding part is driven by the driving part to move, the transmission part comprises an input part and an output part, and the sliding part moves between the input side and the output side. According to the high-reliability capacitive RF MEMS switch provided by the invention, a traditional cantilever beam type capacitive switch is changed into an in-plane sliding type capacitive switch, the on-off of a radio frequency signal is realized by utilizing the change of coupling capacitance between a sliding component and a transmission component, the problem of adhesion failure caused by adhesive force, impact damage, surface effect and the like is avoided, and the reliability of the switch is improved, and the long service life can be realized. Meanwhile, space decoupling of the driving component and the transmission component can be achieved through the horizontal driving mode, the isolation degree and the operation power of the switch are remarkably improved, and the problem of crosstalk of a driving component circuit to signal output of the transmission component is solved.

Description

technical field [0001] The invention belongs to the technical field of radio frequency devices, and more specifically relates to a highly reliable capacitive RFMEMS switch. Background technique [0002] The RF switch is used to switch and route one or several RF signals, including switching between receiving and transmitting, switching between different frequency bands, sharing antennas, etc. It is one of the most commonly used devices in the RF path. It is widely used in RF test instruments, automatic test systems (ATE), radio frequency wireless communication systems (mobile phones, base stations), radar communication systems, satellite communication systems and other fields. [0003] Among them, compared with traditional semiconductor switches, RF MEMS radio frequency switches have excellent characteristics such as high linearity, low loss, high isolation, small volume, etc., and low energy consumption due to the use of mechanical switching to control the on-off of radio f...

Claims

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Application Information

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IPC IPC(8): H01H59/00
CPCH01H59/0009
Inventor 杨德智白玉蝶向小健郑泉水
Owner RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN
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