Method for improving warping degree of silicon carbide wafer

Abstract

The invention discloses a method for improving the warping degree of a silicon carbide wafer, wherein the warping degree of the silicon carbide wafer is improved by performing dry etching on the back surface of the silicon carbide wafer. The method comprises the following steps: S1, carrying out ion implantation on the front surface of a silicon carbide wafer; S2, performing dry etching on the back surface of the silicon carbide wafer obtained in the step S1; and S3, carrying out a subsequent photoetching process on the front surface of the wafer obtained in the step S2. According to the method, dry etching is carried out on the back face of the silicon carbide wafer, warping degree increase caused by the processes such as ion implantation is compensated, the warping degree of the silicon carbide wafer is improved, the strict requirement of the photoetching alignment process for the warping degree is met, and the risks of wafer falling, wafer breaking and the like in the automatic wafer carrying process of semiconductor equipment are reduced.

Description

technical field [0001] The invention relates to a method for improving the warpage of a silicon carbide wafer, which belongs to the technical field of semiconductor manufacturing. Background technique [0002] Silicon carbide (SiC) is a third-generation wide-bandgap semiconductor material. Its wide bandgap, high breakdown electric field, high saturation drift velocity and high thermal conductivity make SiC devices work at high temperature, high power and high frequency. Working under special conditions has aroused widespread concern from the outside world. In the manufacturing process of silicon carbide devices, the warpage of the wafer has an important impact on the quality of device manufacturing. On the one hand, especially after ion implantation and other processes, the increase in warpage will affect the smooth progress of subsequent processes (such as optical The focusing and alignment step of the engraving process) has an important impact; on the other hand, the real...

AI Technical Summary

Problems solved by technology

However, the above-mentioned existing technologies have the following disadvantages: first, the cost of devices based on silicon carbide materials is increased, and the greater the thickness of the silicon carbide substrate, the more materials consumed by a single wafer, and the higher the cost; second, Resulting in cumbersome and complicated process, low efficiency and yield loss

Process is cumbersome and leads to inefficiency and yield loss

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