Unlock instant, AI-driven research and patent intelligence for your innovation.

Quantum dot material, preparation method thereof, quantum dot light-emitting diode and light-emitting device

A quantum dot material and quantum dot light-emitting technology, which is applied in the field of quantum dot light-emitting diodes, quantum dot materials and their preparation, and light-emitting devices, can solve problems such as reducing carrier transport capacity and hindering carrier movement, and achieve improved luminescence Performance, the effect of improving luminous efficiency

Inactive Publication Date: 2021-06-29
TCL CORPORATION
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a quantum dot material and its preparation method, aiming to solve the problem that the longer oleic acid carbon chains coated on the surface of quantum dots form a potential barrier to hinder the movement of carriers and reduce the amount of carriers in quantum dot light-emitting diodes. The problem of transport capacity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot material, preparation method thereof, quantum dot light-emitting diode and light-emitting device
  • Quantum dot material, preparation method thereof, quantum dot light-emitting diode and light-emitting device
  • Quantum dot material, preparation method thereof, quantum dot light-emitting diode and light-emitting device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0028] Correspondingly, such as figure 1 As shown, the second aspect of the embodiment of the present invention provides a method for preparing a quantum dot material, comprising the following steps:

[0029] S01. Provide an initial quantum dot solution and hydrazine molecules, add the hydrazine molecules to the initial quantum dot solution, heat the reaction, and make the quantum dot particles coordinate with the nitrogen atoms in the hydrazine molecules to prepare quantum dot materials.

[0030] In the preparation method of the quantum dot material provided in the embodiment of the present invention, the quantum dot particles and the hydrazine molecules are mixed in a liquid medium to react to prepare the quantum dot particles and the nitrogen atoms in the hydrazine molecules. Bit-bonded quantum dot materials. The method is simple in operation, mild in conditions and easy to control, and is conducive to realizing large-scale production. More importantly, the quantum dot ma...

Embodiment 1

[0076] A quantum dot material modified by hydrazine molecules, the preparation method of which is as follows:

[0077] 1) Add an appropriate amount of CdS / ZnS to 20ml ODE to form a quantum dot colloid solution with a total concentration of 20mg / mL. Then the temperature was raised to 200°C in an argon atmosphere, and then oleylamine was injected according to the volume ratio of quantum dots and oleylamine at a ratio of 100:1, and the temperature was kept for 30 minutes to form a quantum dot solution.

[0078] 2) Add hydrazine into the quantum dot solution according to the molar ratio of quantum dots to hydrazine of 1:1, and continue to stir at 200°C for 30min. After the reaction, after the reaction solution was lowered to room temperature, it was precipitated and washed step by step with a mixed solvent of ethyl acetate and ethanol, a mixed solvent of acetone and ethanol, and then redispersed in n-hexane to prepare a hydrazine-modified CdS / ZnS quantum point.

Embodiment 2

[0080] A quantum dot material modified by a 4-methylhydrazine molecule, the preparation method of which is as follows:

[0081] 1) Add an appropriate amount of Cd 1-x Zn x S was added to 20ml 1-hexadecene to form a quantum dot colloidal solution with a total concentration of 30mg / mL. Then the temperature was raised to 200°C in an argon atmosphere, and then oleylamine was injected according to the volume ratio of quantum dots and oleylamine at a ratio of 120:1, and the temperature was kept for 30 minutes to form a quantum dot solution.

[0082] 2) Add 4-methylhydrazine to the quantum dot solution according to the molar ratio of quantum dots to 4-methylhydrazine of 1:1.5, and continue stirring at 200° C. for 1 h. After the reaction is over, after the reaction solution has dropped to room temperature, it is precipitated and washed step by step with a mixed solvent of ethyl acetate and ethanol, a mixed solvent of acetone and ethanol, and then redispersed in n-octane to prepare 4...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
concentrationaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a quantum dot material. The quantum dot material comprises quantum dot particles and hydrazine molecules combined on the surfaces of the quantum dot particles, and the hydrazine molecules are coordinated and combined with the quantum dot particles through nitrogen atoms. The quantum dots modified by the hydrazine molecules can improve the luminous efficiency of the quantum dots, so that the luminous performance of quantum dot light-emitting diode is improved.

Description

technical field [0001] The invention belongs to the technical field of quantum dot materials, and in particular relates to a quantum dot material and a preparation method thereof, a quantum dot light-emitting diode, and a light-emitting device. Background technique [0002] LCD (abbreviation for Liquid Crystal Display, Liquid Crystal Display) display technology is the mainstream display technology today. Since the LCD display requires a backlight source, it has many limitations such as complex structure and process, high cost and high power consumption. The study found that the use of quantum dots (QDs) to replace traditional phosphors can greatly improve the color gamut of the display. The application of quantum dots in the backlight module shows that the display color gamut can be increased from 72% NTSC to 110% NTSC. However, when quantum dots get rid of backlight technology and use active matrix quantum dot light-emitting diode display devices, compared with traditiona...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/56C09K11/06H01L51/50B82Y20/00B82Y30/00B82Y40/00
CPCC09K11/565C09K11/06B82Y20/00B82Y30/00B82Y40/00C09K2211/10H10K50/115
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION