Field-effect tube structure film based on lanthanide manganese oxide and monocrystalline silicon and preparation method thereof

Abstract

The invention discloses a field-effect tube structure film based on lanthanide manganese oxide and monocrystalline silicon and a preparation method thereof. The monocrystalline substrate, the lanthanide manganese oxide and three electrodes of the same type are included. The preparation method of the field-effect tube structure film based on the lanthanide manganese oxide and the monocrystalline silicon is disclosed. The preparation method comprises the steps of preparation of a lanthanide manganese oxide material and formation of three same-type electrodes of a field effect tube structure. The three same-type electrodes are metal electrodes and comprise a drain electrode, a source electrode and a grid electrode, the field effect tube structure is formed, and the measurement mode of the rectification characteristic of the lanthanide manganese oxide is different from that of a simple diode structure. The research in the field of semiconductor devices can be expanded, different material systems can be changed, but the same field-effect tube structure measurement mode is adopted so that the lanthanide manganese oxide can obtain unique performance under the action of an external electric field and illumination, and the combination of a field-effect tube and a ferromagnetic material is also realized; and the external magnetic field provides a possibility for the change of the rectification characteristic of the lanthanide manganese oxide.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a field effect transistor structure thin film based on lanthanide manganese oxide and single crystal silicon and a preparation method thereof. Background technique [0002] The structures used in semiconductor devices include diodes, MOSFETs, JFETs, MODFETs, MESFETs, and tunneling structures, etc. However, with the development of technology, the demand for chips is increasing and the direction of miniaturization is developing. The basis of chip development is based on Semiconductor devices and their related semiconductor materials are the basis. The semiconductor materials involved in common semiconductor devices rarely involve ferromagnetic materials. The introduction of ferromagnetic materials is conducive to promoting the development of multifunctional semiconductor devices. Among them, lanthanide manganese oxide materials in ferromagnetic materials have been widely studi...

AI Technical Summary

Problems solved by technology

However, it lacks the rectification characteristics of lanthanide manganese oxide materials measured in the form of field effect transistor structure. Therefore, the invention of a field effect transistor structure thin film based on lanthanide manganese oxide and single crystal silicon can provide a certain level of research in the field of semiconductor devices. train of thought

Images