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Manufacturing method of LED epitaxial wafer capable of improving brightness

A technology of LED epitaxial wafer and manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of low brightness of LED epitaxial wafer, hinder LED performance, reduce energy saving effect, etc., so as to improve antistatic ability and crystal quality. Improve and improve the effect of wavelength concentration

Active Publication Date: 2021-07-09
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the brightness of the LED epitaxial wafer prepared by the existing LED epitaxial wafer production method is not high, which seriously hinders the improvement of LED performance and reduces the energy-saving effect of LED.
[0004] To sum up, there is an urgent need for a method of making LED epitaxial wafers with improved brightness to solve the problem of low brightness of LED epitaxial wafers in the prior art.

Method used

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  • Manufacturing method of LED epitaxial wafer capable of improving brightness
  • Manufacturing method of LED epitaxial wafer capable of improving brightness
  • Manufacturing method of LED epitaxial wafer capable of improving brightness

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0037] see figure 1 , a method for manufacturing an LED epitaxial wafer with improved brightness, wherein the AlN layer of the LED epitaxial wafer is provided with a raised cone, an aluminum area layer, and a concave and inverted conical cavity arranged in sequence, one of which is They are not connected to each other. The arrangement of the cone, the aluminum region layer and the conical cavity in the present invention is only used to emphasize the positional relationship of the three when they are arranged, and it is not limited to the edge of the LED epitaxial wafer. body or aluminum zone layer or conical cavity start or end;

[0038] The production method includes the following steps,

[0039] Step 3, making a plurality of raised cones 1.1 at intervals on the AlN layer 1;

[0040] Step 4: Fabricate a plurality of concave and inverted conical cavities 1.2 at intervals on the AlN layer 1, the conical cavities 1.2 and the cones 1.1 are arranged alternately and are not conne...

Embodiment 2

[0057] Different from Example 1, in step 3, D1 is 1000nm, height H1 is 850nm, the shortest distance d1 between the bottom surfaces of adjacent cones 1.1 is 2100nm, and in step 4, D2 is 800nm, and height H2 is 850nm. The shortest distance d2 between the top surface of the conical cavity 1.2 and the bottom surface of the adjacent cone 1.1 is 500nm, and the thickness of the AlN layer 1 is 1800nm.

Embodiment 3

[0059] Different from Example 1, in step 3, D1 is 1100nm, height H1 is 900nm, the shortest distance d1 between the bottom surfaces of adjacent cones 1.1 is 2200nm, and in step 4, D2 is 900nm, and height H2 is 900nm. The shortest distance d2 between the top surface of the conical cavity 1.2 and the bottom surface of the adjacent cone 1.1 is 600nm, and the thickness of the AlN layer 1 is 2000nm.

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Abstract

The invention provides a manufacturing method of an LED epitaxial wafer capable of improving brightness. An AlN layer of the LED epitaxial wafer is provided with protruding cones, aluminum region layers and recessed and inverted conical cavities which are sequentially and circularly arranged, wherein the protruding cones, the aluminum region layers and the recessed and inverted conical cavities are not connected. The manufacturing method comprises the following steps: step 3, manufacturing a plurality of protruding cones on the AlN layer at intervals; 4, manufacturing a plurality of concave and inverted conical cavities on the AlN layer at intervals, wherein the conical cavities and the cones are arranged in a staggered mode and are not connected in pairs; 5, manufacturing a plurality of aluminum region layers on the AlN layer at intervals, wherein each aluminum area layer is adjacent to the conical cavity and / or the cone; and step 6, periodically growing a plurality of multi-quantum well light-emitting layers on the AlN layer. According to the invention, the brightness of the LED epitaxial wafer can be improved, the antistatic capability is enhanced, the concentration ratio of wavelength is improved, and the forward voltage of the LED epitaxial wafer can be reduced.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a method for manufacturing an LED epitaxial wafer with improved brightness. Background technique [0002] LED epitaxial wafer is a solid light source, which is a light-emitting device made of semiconductor P-N junction. When the forward current is turned on, the minority carriers (ie, electrons) and the majority carriers (ie, holes) in the semiconductor recombine, and the released energy is emitted in the form of photons or partly in the form of photons. LED epitaxial wafer lighting has significant advantages such as high efficiency, energy saving, environmental protection and long service life, and has been widely used in various aspects such as street lights, display screens, indoor lighting and automobile lights. Considering that luminous brightness is the most important measure of the competitiveness of LED epitaxial wafers, how to improve the brightness of LE...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/22
CPCH01L33/22H01L33/005
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS