Photo-thermal deflection spectrum testing device with wide wavelength coverage

Abstract

The invention discloses a photo-thermal deflection spectrum testing device with wide wavelength coverage. The photo-thermal deflection spectrum testing device comprises a pump light source, a monochromator, an optical chopper and a beam splitter which are sequentially arranged along a light path, a photoelectric detector is arranged on a reflection light path of the beam splitter, and an absorption cell is arranged on a transmission light path of the beam splitter; the signal output end of the photoelectric detector is connected with the computer; a detection light source and a position sensitive detector are respectively arranged on two side surfaces, vertical to a transmission light path of the beam splitter, of the absorption cell; the signal output end of the position sensitive detector is sequentially connected with a lock-in amplifier and a computer; the absorption cell is used for accommodating a heat-conducting medium, and a sample table is fixed at the bottom and is used for fixing a to-be-detected film; a focusing lens is arranged between the absorption cell and the beam splitter, and the pump light transmitting through the beam splitter enters the absorption cell through the focusing lens; and the pump light source adopts a laser-driven broadband light source and is used for emitting pump light of 170-2100 nm. According to the invention, the test requirements from a narrow-band-gap material to a wide-band-gap material can be met at the same time.

Description

technical field [0001] The invention belongs to the technical field of spectrum detection, and in particular relates to a photothermal deflection spectrum testing device with wide wavelength coverage. Background technique [0002] Thin films are the basis of optoelectronic devices and directly determine the performance of optoelectronic devices. Existing general-purpose thin film characterization methods often have limited applicability and low sensitivity. Therefore, it is necessary to develop a thin film characterization method with wide application range and high sensitivity to guide the development and application of optoelectronic devices. [0003] At present, there are many thin film characterization methods based on light absorption. For example, the Chinese patent document with the publication number CN106546536A discloses a high-precision film weak absorption testing device and method, and the Chinese patent document with the publication number CN105021627A disclo...

AI Technical Summary

Problems solved by technology

[0005] Limited by the low power output of ordinary pump light sources (such as xenon lamps) in the ultraviolet and near-infrared regions and the structure of the entire test device, the reported photothermal deflection spectroscopy test device cannot meet the high sensitivity of narrow bandgap materials and wide bandgap materials. test requirements

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