Optimization method for improving photoetching defects caused by water adsorption of front-layer film in photoetching

Abstract

The invention provides an optimization method for improving photoetching defects caused by water adsorption of a front-layer film in photoetching. The optimization method comprises the following steps of: determining the thickness T of a standard SOC coating needing to be sprayed on a wafer substrate; spraying a first SOC coating with a C1 spraying amount on the wafer substrate; baking the first SOC coating to make the formed first SOC coating possess athickness of T1; carrying out surface treatment on the first SOC coating by utilizing a solvent or oxygen-containing plasma; spraying a second SOC coating with the C2 spraying amount on the first SOC coating; baking the second SOC coating so as to make the formed second SOC coating process a thickness of T2, and T be equal to the sum of T1 and T2; and coating an anti-reflection coating on the second SOC coating, then spin-coating a photoresist coating on the anti-reflection coating, and exposing, developing and etching the photoresist coating through a mask to form a required pattern. According to the method of the invention, the influence on photoetching and etching is reduced. Therefore, the purpose of saving cost is achieved, and the influence on the photoresist defects caused by the adsorption substance of the front-layer film is greatly reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an optimization method for improving photolithography defects caused by water adsorption of a thin film before photolithography. Background technique [0002] In integrated circuit manufacturing, various thin film materials are deposited on the wafer substrate in order to meet actual needs. According to the difference in the selected deposition process, the density of the deposited thin film is different, which also depends on the requirements and cost of thin film performance. Waiting for consideration. For processes such as HK and FinFET, amorphous silicon (α-Si) is widely used as a dummy material, mainly because this material is easier to remove and the cost is lower. For α-Si, the density of this material is low, that is to say, the film is relatively sparse after being formed, and it is easy to absorb moisture in the air for a long time. The existence of this moistur...

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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide an optimized method for improving photolithography defects caused by the adsorption of water in the front layer of the photolithography film, which is used to solve the problems caused by the adsorption of water in the front layer of the photolithography film in the prior art. engraved defect problem

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