Longitudinally arranged MOSFET

Abstract

The invention provides a longitudinally arranged MOSFET which comprises a first conductive substrate, a drain metal layer is arranged below the first conductive substrate, a first conductive epitaxial layer is arranged on the first conductive substrate, and a central gate metal layer, two edge gate metal layers and two multi-channel interlayers are arranged on the first conductive epitaxial layer; the bottom surface of the central gate metal layer and the two side surfaces, adjacent to the multi-channel interlayers, of the central gate metal layer are covered with central passivation layers, and a second conductive central barrier layer is arranged below the central gate metal layer; the bottom surfaces of the edge gate metal layers and the side surfaces, adjacent to the multi-channel interlayers, of the edge gate metal layers are covered with edge passivation layers, and second conductive edge barrier layers are arranged below the edge gate metal layers; and each multi-channel interlayer comprises a second conduction type channel layer, a first conduction type source electrode layer and a source electrode metal layer which are stacked in sequence. According to the longitudinally arranged MOSFET of the invention, four conductive channels can be formed, the passable current can be obviously increased, and the size of the whole structure of the longitudinally arranged MOSFET can be kept to be microminiature.

Description

technical field [0001] The invention relates to a MOSFET tube, and specifically discloses a MOSFET tube arranged vertically. Background technique [0002] The full name of the MOSFET tube is a metal-oxide semiconductor field effect transistor. In most cases, even if the source and the drain are reversed, it will not affect the performance of the device. The MOSFET tube has low noise, low power consumption, large dynamic range, and easy integration. , no secondary breakdown, wide safe working area and other advantages. [0003] MOSFET tubes are widely used in large-scale integrated circuits. MOSFET tubes are provided with electrically opposite material layers on both sides of the middle layer. The middle layer is connected to the gate, and the material layers on both sides are connected to the source and drain respectively. The specific operation process is to apply an external voltage to the gate to trigger the migration of the majority carriers in the intermediate layer to...

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Problems solved by technology

[0003] MOSFET tubes are widely used in large-scale integrated circuits. MOSFET tubes are provided with electrically opposite material layers on both sides of the middle layer. The middle layer is connected to the gate, and the material layers on both sides are connected to the source and drain respectively. The specific operation process is to apply an external voltage to the gate to trigger the migration of the majority carriers in the intermediate layer to form a conductive channel, thereby realizing the conduction between the source and the drain, but the conductive channel formed by the MOSFET tube in the prior art There is only one channel, and there is a problem of insufficient conduction current, so it cannot be directly applied to high-power circuits

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