Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin-film solar cell structure based on different scribe lines and preparation method thereof

A solar cell and thin film technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as poor conductivity, ineffective contact between grid lines and back electrode layers, and serious battery thermal effects, achieving strong practicability and avoiding problems. Battery thermal effect problem, the effect of reducing series resistance

Pending Publication Date: 2021-07-16
HUANENG NEW ENERGY CO LTD +1
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the above-mentioned prior art, the existing scribing method of thin-film solar cells is likely to cause ineffective contact between the grid line and the back electrode layer, and a large amount of current flows through the poorly conductive TCO layer at the disconnection, resulting in The shortcoming of battery thermal effect is serious, the object of the present invention is to provide a kind of thin-film solar cell structure and its preparation method based on different scribing lines

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin-film solar cell structure based on different scribe lines and preparation method thereof
  • Thin-film solar cell structure based on different scribe lines and preparation method thereof
  • Thin-film solar cell structure based on different scribe lines and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] see figure 1 , a thin-film solar cell structure based on different scribing lines, which sequentially includes a substrate 1, a bottom electrode 2, a PN junction film layer 3, and a TCO layer 4 from bottom to top;

[0054] The bottom electrode 2 is provided with a P1 scribe groove 6, and the P1 scribe groove 6 extends to the upper surface of the substrate 1; the TCO layer 4 is provided with a P2 scribe groove 7 and a P3 scribe groove 8, and the bottom of the P2 scribe groove 7 The bottom of the groove 8 and P3 extend to the upper surface of the bottom electrode 2; the upper surface of the TCO layer 4 is provided with grid lines 5; the groove 6 of P1 is filled with the film layer 3 of the PN junction region; 7 is filled with conductive material.

Embodiment 2

[0056] Except for the following content, all the other contents are the same as in Example 1.

[0057] There are several grooves 6 in P1;

[0058] The size range of the P1 line groove 6 is 1 μm in line width, and the distance between the centers of adjacent P1 line grooves 6 is 3 mm.

[0059] The size range of the P2 reticle groove 7 is 10 μm in line width, and the distance between the center of the P2 reticle groove 7 and the center of the P1 reticle groove 6 is 30 μm;

[0060] The size range of the P3 scribed groove 8 is 10 μm in line width, and the distance between the center of the P3 scribed groove 8 and the center of the P2 scribed groove 7 is 30 μm.

[0061] The size range of the grid lines 5 is 5 μm in line width, and the distance between the centers of two adjacent grid lines 5 is 300 μm. The filling thickness of the conductive material was 100 μm.

Embodiment 3

[0063] Except for the following content, all the other contents are the same as in Example 1.

[0064] The size range of the P1 scoring groove 6 is 100 μm in line width, and the distance between the centers of adjacent P1 scoring grooves 6 is 30 mm.

[0065] The size range of the P2 reticle groove 7 is 100 μm in line width, and the distance between the center of the P2 reticle groove 7 and the center of the P1 reticle groove 6 is 300 μm;

[0066] The size range of the P3 line groove 8 is 100 μm in line width, and the distance between the center of the P3 line groove 8 and the center of the P2 line groove 7 is 300 μm.

[0067] The size range of the grid lines 5 is 50 μm in line width, and the distance between the centers of two adjacent grid lines 5 is 5000 μm. The filling thickness of the conductive material was 100 μm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a thin-film solar cell structure based on different scribe lines and a preparation method thereof, and belongs to the technical field of thin-film solar cell preparation. The thin-film solar cell structure sequentially comprises a substrate, a bottom electrode, a PN junction region film layer, a TCO layer and a grid line from bottom to top. A P2 scribing groove and grid line grooves are filled with a conductive material, a metal film layer is arranged in the P2 scribing groove and is connected with a grid line, so that the metal grid line in a P2 scribing groove is not easy to strip when a P3 scribing groove is scribed. The conductive material in the grid line is in direct contact with the bottom electrode, so that the series resistance is reduced. According to the solar cell structure, the problem of contact between the grid line and the back electrode layer in the P2 scribing groove is solved, meanwhile, the problem of stripping of the grid line in the P2 groove during P3 scribing is solved, and the problem that in the prior art, due to contact between the grid line and the back electrode of the thin-film solar cell, the thermal effect of the cell is serious is solved.

Description

technical field [0001] The invention belongs to the technical field of thin-film solar cell preparation, and relates to a thin-film solar cell structure based on different scribing lines and a preparation method thereof. Background technique [0002] The basic structure of a thin-film solar cell is usually composed of a PN junction and front and rear electrodes. The front electrode is usually a transparent conductive oxide film (TCO). , the film layer is required to have a higher transmittance in order to allow more light to enter the absorbing layer to excite photogenerated carriers. However, from a technical point of view, the conductivity and permeability of the transparent conductive film layer restrict each other, and the existing thin-film solar cells cannot obtain the maximum conductivity and the highest transmittance at the same time. In order to effectively collect carriers, photolithography is used in the prior art to prepare metal grid lines on the surface of the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022425H01L31/022466H01L31/18Y02E10/50
Inventor 许世森李新连肖平黄斌丁坤赵东明赵志国秦校军熊继光张赟李梦洁刘家梁王百月王森
Owner HUANENG NEW ENERGY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com