Venule vascular disease therapeutic instrument
A technology for vascular lesions and therapeutic instruments, applied in the field of laser therapeutic instruments, can solve the problems of high mass production cost of V-shaped cavity, serious thermal effect under high-energy pumping, low efficiency of ordinary straight cavity, etc., and achieves simple structure and easy adjustment. Effect
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Embodiment 1
[0030] Such as image 3 As shown, the present invention provides a therapeutic apparatus for microvenous vascular disease, which includes a light-gathering cavity, a resonant cavity, and a temperature-controlled cooling system. The concentrating cavity includes a pumping source 1 and a gain medium 2 in the same optical path. The resonant cavity is used for oscillating, amplifying and frequency doubling the light emitted by the gain medium 2. The resonant cavity includes a total reflection mirror 3, a Q-switching device 4, a frequency doubling crystal 5, an output mirror 6, a fiber coupling lens 7 and a coupling fiber in the same optical path. 8; the Q-switching device 4 and the frequency doubling crystal 5 are respectively located on two opposite light-emitting sides of the gain medium 2 . The gain medium 2 is a single-doped Nd:YAG laser rod or a double-doped Nd:Ce:YAG laser rod. The two ends of the laser rod and the outer layer of the cylindrical surface are provided with pu...
Embodiment 2
[0038] On the basis of Embodiment 1, the resonant cavity further includes a λ / 4 wave plate 10 between the Q-switching device 4 and the gain medium 2 and a harmonic mirror 11 between the gain medium 2 and the frequency doubling crystal 5 . The λ / 4 wave plate 10 is a wave plate in the 1064nm wave band, and the surface of the λ / 4 wave plate 10 is coated with a dielectric film with a transmittance of not less than 99% in the 1064 nm wave band. By adjusting the direction of the fast axis of the λ / 4 wave plate 3, the The laser is in the best output state. The harmonic mirror 11 is coated with a dielectric film with a transmittance of not less than 99% in the 1064nm band and a reflectivity of not less than 99% in the 532nm band. At this time, what Q-switching device 4 selects is the active electro-optic Q-switching switch, and the active electro-optic Q-switching switch comprises an electro-optic Q-switching crystal and a polarizer 9 of a 1064nm band, and the polarizer 9 is located b...
Embodiment 3
[0040] On the basis of Embodiment 1, the resonant cavity further includes a harmonic mirror 11 located between the gain medium 2 and the frequency doubling crystal 5, and the pumping source 1 is semiconductor array pumping at this time.
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