Composite material and its preparation method and light-emitting diode
A technology of light-emitting diodes and composite materials, which is applied in the field of nanomaterials and can solve problems such as pixel bank deformation
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[0025] On the other hand, the embodiment of the present invention also provides a preparation method of the composite material, such as figure 1 As shown, the preparation method comprises the following steps:
[0026] S01: provide gel solution and alkali metal salt solution;
[0027] S02: mixing the gel solution with an alkali metal salt solution, and performing freezing treatment to obtain a solid gel containing alkali metal ions;
[0028] S03: placing the solid gel containing alkali metal ions in a solution containing fluoride ions, so that the fluoride ions diffuse into the solid gel to obtain a solid gel containing alkali metal fluorides;
[0029] S04: Dissolving the solid gel containing the alkali metal fluoride in a solvent to obtain a composite material.
[0030] In the preparation method of the composite material of the embodiment of the present invention, an alkali metal salt solution is added to a certain gel solution, mixed uniformly, and then frozen to form a gel...
Embodiment 1
[0056] An electronic device includes a substrate, a QLED electronic element bonded on the substrate, and an encapsulation film for encapsulating the bottom-emitting QLED electronic element. Specifically, the structure of the electronic device is as follows figure 2 and image 3 shown. From bottom to top: substrate / ITO (ie cathode, thickness 50nm) / HIL (hole injection layer, material is PEDOT:PSS, thickness 50nm) / HTL (ie hole transport layer, material is poly-TPD, thickness 30nm) / light-emitting layer (the material is quantum dots, the thickness is 20nm) / ETL (the electron transport layer, the material is ZnO, the thickness is 30nm) / EIL (the electron injection layer, which is gelatin-coated NaF, the thickness is 3nm) / Ag alloy (ie cathode, thickness 50nm) / SiN (ie thin film encapsulation layer, thickness 100mm).
[0057] According to the QLED structure of this embodiment, each layer of films is sequentially printed and deposited on the ITO substrate, that is, the corresponding Q...
Embodiment 2
[0060] An electronic device includes a substrate, a QLED electronic element bonded on the substrate, and an encapsulation film for encapsulating the bottom-emitting QLED electronic element. specifically. The order of the electronic device from bottom to top is: Ag+ITO (ie cathode substrate, thickness 50nm) / HIL (hole injection layer, material is PEDOT:PSS, thickness 50nm) / HTL (ie hole transport layer, material is poly -TPD, thickness 30nm) / light-emitting layer (quantum dots, thickness 20nm) / ETL (electron transport layer, material ZnO, thickness 30nm) / EIL (electron injection layer, agar-coated LiF, thickness 8nm) ) / Ag alloy (ie cathode, thickness of 20nm) / SiN (ie thin film encapsulation layer, thickness of 100mm).
[0061] According to the QLED structure of this embodiment, each layer of films is sequentially printed and deposited on the ITO substrate, that is, the corresponding QLED flexible device is obtained.
[0062] Wherein, the preparation method of the electron injectio...
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Abstract
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