Method for purifying TaSi2 powder

Abstract

The invention discloses a method for purifying TaSi2 powder, relates to the field of materials, and aims to provide a method for purifying TaSi2 powder, which is economical, easy to implement and good in purification effect. The method comprises the following steps: taking TaSi2 raw powder, adding a KOH solution with the concentration of 1-5 mol/L, carrying out stirring reaction in a water bath kettle at the room temperature to 90 DEG C for 2-10 hours, then carrying out suction filtration by using a sand core funnel, washing to be neutral by using ultrapure water, and carrying out vacuum drying to obtain purified TaSi2 powder, wherein the mass volume ratio of the TaSi2 raw powder to the KOH solution is 1g: (10-50) mL. From the perspective of economy and easy implementation, the invention provides the following purification treatment process: the purification effect is achieved through a series of treatment. The method is applied to the field of TaSi2 powder.

Description

technical field [0001] The invention relates to the field of materials, in particular to a TaSi 2 Powder purification method. Background technique [0002] TaSi 2 It has excellent properties such as high melting point, low resistivity, corrosion resistance, high temperature oxidation resistance, and good compatibility with silicon, carbon and other substrate materials. It can be used as a coating for some circuit components or parts of some high temperature structures. Its preparation process usually uses high-purity metal Ta and Si as raw materials, which are heated at high temperature in a hydrogen atmosphere. Therefore TaSi 2 The raw powder has high purity, but there are also trace impurities, which are unreacted Ta and Si, etc. Therefore, the purification treatment of the powder is mainly for Ta, Si, SiO 2 and Ta 2 o 5 The effective removal of SiO 2 and Ta 2 o 5 content is very small. [0003] There are many reports on the chemical removal methods of the above...

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Problems solved by technology

R. Hsiao et al. in CF 4 / O 2 Low-pressure plasma etching is used in the mixed gas, and the etching rate can reach 6.0 μm / min, but it will produce toxic gas, which is difficult to popularize and apply

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