Metal film and sputtering target

A metal film and sputtering target technology, which is applied in the field of sputtering targets, can solve problems such as the deterioration of electrical or optical properties of metal films, and achieve the effects of high-precision etching, inhibiting etching rate, and inhibiting agglutination
CN113166922APending Publication Date: 2021-07-23MITSUBISHI MATERIALS CORP
11 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
MITSUBISHI MATERIALS CORP
Publication Date
2021-07-23

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A metal film of the present invention contains Cu in a range of 0.10-5.00 at. %, not more than 40 mass ppm of Pd, not more than 20 mass ppm of Pt, not more than 20 mass ppm of Au, and not more than 10 mass ppm of Rh, the total contained amount of Pd, Pt, Au, and Rh being not more than 50 mass ppm, and the remaining portion being Ag and unavoidable impurities.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The present invention relates to, for example, a metal film used as a reflective film, an electrode film, or a wiring film, and a sputtering target used when forming the metal film.

[0002] This application claims priority based on Patent Application No. 2018-228367 filed in Japan on December 5, 2018, and uses the content thereof here. Background technique

[0003] For example, as a reflective film, an electrode film, and a wiring film of a display device such as a liquid crystal display, an organic EL display, or a touch panel, it has been proposed to use a metal film made of Ag or an Ag alloy as disclosed in Patent Document 1, for example.

[0004] In addition, in Patent Documents 2 to 4, a laminated film having a laminated structure of a transparent conductive oxide film and a metal film made of Ag or an Ag alloy is applied.

[0005] In the reflective film, the electrode film, and the wiring film described above, as shown in the above-mentioned Pa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More