Gallium nitride single crystal wafer fixing device and polishing method
A gallium nitride single crystal and fixing device technology, applied in grinding/polishing equipment, grinding workpiece supports, grinding machines, etc., can solve the problem of high hardness of gallium nitride materials, large thickness of gallium nitride epitaxial crystals, large curvature, thermal expansion, etc. Coefficient mismatch and other problems, to achieve the effect of improving product yield, reducing polishing difficulty, and reducing polishing time
Pending Publication Date: 2021-08-03
NANTONG UNIVERSITY
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, due to the thermal expansion coefficient mismatch between GaN and the heterogeneous substrate, the larger the thickness of the grown GaN epitaxial crystal, the greater the curvature, and it may even fall off the heterogeneous substrate by itself. It is very unfavorable to prepare devices by homoepitaxial substrate
Moreover, to be used as a substrate material, the surface needs to be precisely processed to the atomic level. It is difficult to process a wafer with a large curvature to the required precision.
Moreover, gallium nitride material has high hardness and high brittleness, and it is easy to fragment during processing.
This brings fatal difficulties to the application of gallium nitride materials
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0018] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below in conjunction with specific embodiments. The embodiments described below are exemplary only for explaining the present invention, and should not be construed as limiting the present invention.
[0019] Aiming at the problems existing in the prior art, the present invention provides a polishing method for a gallium nitride single crystal wafer, aiming at the shape characteristics of the gallium nitride single crystal material grown on the heterogeneous substrate 2, the gallium nitride single crystal material and the heterogeneous Cracks are generated between the substrates 2 due to thermal mismatch and lattice mismatch, such as figure 1 As shown, it is easy to break during the peeling process. Even if it is peeled off, its thickness is small and the thickness difference is large. It is difficul...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| Depth | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to a gallium nitride single crystal wafer fixing device and a polishing method, and belongs to crystal processing technologies. According to the appearance characteristics of gallium nitride single crystal thick film materials growing on silicon carbide, sapphire and other heterogeneous substrates, cracks are generated between the single crystal materials and substrate slices due to thermal mismatch and lattice mismatch, the single crystal materials and the substrate slices are prone to fragmentation in the stripping process, even if the single crystal materials and the substrate slices are stripped, the thickness is small, the thickness difference is large, and grinding and polishing cannot be conducted easily through a grinder, a grinding machine and other tools. According to the gallium nitride single crystal wafer fixing device provided by the invention, the heterogeneous substrates do not need to be stripped, the polishing surface can be quickly fixed and determined by combining orientation equipment, and a flat gallium nitride single crystal wafer can be obtained by means of mechanical polishing in the later period. The method is simple in process and easy to operate.
Description
technical field [0001] The invention relates to the technical field of crystal processing, in particular to a gallium nitride single wafer fixing device and a polishing method. Background technique [0002] The invention of the transistor in the 20th century prompted people to pay more and more attention to the research of semiconductor materials. The development and application of integrated circuits has promoted the research of first-generation elemental semiconductors such as silicon and germanium. Then it develops into a complete process industry chain from material research to device fabrication. The research on the second-generation compound semiconductor materials has promoted the application of microwave and optoelectronic devices. Gallium nitride is a typical third-generation semiconductor material. It has important applications in the fields of optics and electronics, especially in high-brightness blue LEDs, making the research and application of gallium nitride ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): B24B41/06B24B7/22
CPCB24B41/068B24B7/228
Inventor杨培培李祥彪
OwnerNANTONG UNIVERSITY