Application of cleaning fluid after chemical mechanical polishing

Abstract

The invention discloses an application of a cleaning fluid after chemical mechanical polishing. The invention specifically discloses the application of the cleaning fluid to cleaning of a semiconductor device after chemical mechanical polishing. The raw materials of the cleaning fluid comprise the following components by mass: 0.01%-25% of strong base, 0.01%-30% of alcohol amine, 0.001%-1% of antioxidants, 0.01%-0.1% of polypeptide, 0.01%-0.1% of amino acid, 0.01%-10% of corrosion inhibitors, 0.01%-10% of chelating agents, 0.01%-5% of surfactants and 28.9%-89.9% of water, and the sum of the mass fractions of all the components is 100%, wherein the amino acid is a combination of histidine and cysteine, and the polypeptide is a combination of reduced glutathione (peptide A) and oxidized glutathione (peptide B). The cleaning fluid is higher in cleaning capacity, lower in corrosion rate, higher in BTA removal capacity and higher in stability, and the effects of cleaning, corrosion inhibition and BTA removal can be achieved at the same time.

Description

technical field [0001] The invention relates to the application of cleaning liquid after chemical mechanical polishing. Background technique [0002] Metal materials such as copper, aluminum, tungsten, etc. are commonly used wire materials in integrated circuits. Chemical Mechanical Polishing (CMP) has emerged as the primary technique for wafer planarization during device fabrication. Metal chemical mechanical polishing fluids usually contain abrasive particles, complexing agents, metal corrosion inhibitors, oxidants, and the like. The abrasive particles are mainly silicon dioxide, aluminum oxide, aluminum-doped or aluminum-covered silicon dioxide, ceria, titanium dioxide, polymer abrasive particles, etc. After the metal CMP process, the surface of the wafer will be polluted by metal ions and abrasive particles in the polishing solution, which will affect the electrical characteristics of the semiconductor and the reliability of the device. The residue of these metal ions...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide an application of cleaning solution after chemical mechanical polishing in order to overcome the defects of existing cleaning solutions such as cleaning, corrosion, timeliness, and poor biocompatibility.

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