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Silicon carbide single crystal growth method capable of reducing heater loss

A technology of silicon carbide single crystal and growth method, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of graphite crucible loss and the like

Active Publication Date: 2021-08-06
哈尔滨科友半导体产业装备与技术研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims to solve the technical problem that the graphite crucible is prone to loss in the existing PVT method for growing silicon carbide single crystal, and provides a method for growing silicon carbide single crystal that reduces heater loss

Method used

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  • Silicon carbide single crystal growth method capable of reducing heater loss
  • Silicon carbide single crystal growth method capable of reducing heater loss
  • Silicon carbide single crystal growth method capable of reducing heater loss

Examples

Experimental program
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Embodiment 1

[0024] Embodiment 1: The silicon carbide single crystal growth method of reducing heater loss in this embodiment is carried out according to the following steps:

[0025] One, the device of growing silicon carbide single crystal comprises graphite heater 1, graphite crucible 2; Graphite crucible 2 is made up of crucible upper cover 2-1 and crucible main body 2-2; Graphite crucible 2 is placed in graphite heater 1, and then In the space between graphite crucible 2 and graphite heater 1, graphite powder 3 is filled and compacted with graphite compacting device; Graphite heater 1 is cylindrical, and its internal diameter is 150mm, and graphite crucible 2 is cylindrical, and its The outer diameter is 125mm; the graphite compacting device is composed of a pressure cylinder 7, a cylinder cover 8 and a handle 9, wherein the lower part of the cylinder cover 8 is connected to the pressure cylinder 7, and the upper part is connected to the handle 9; the graphite compaction device is comp...

Embodiment 2

[0028] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the graphite crucible 2 is placed in the graphite heater 1 in the step 1, and the graphite powder 3 is not filled in the gap between the graphite crucible 2 and the graphite heater 1; Others are the same as in Example 1.

[0029] The silicon carbide single crystal growth method for reducing heater loss in Example 1 has a good surface quality of the grown silicon carbide single crystal, and the surface quality of the silicon carbide single crystal prepared after the crucible is reused 6 times is still very good, as Figure 4 shown. This is because the graphite powder 3 is filled in the gap between the graphite crucible 2 and the graphite heater 1, which can ensure that the heating efficiency of the crucible does not decrease after repeated use, so the surface quality of the grown silicon carbide single crystal is excellent.

[0030] And the method of embodiment 2, the silicon carbide single cr...

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Abstract

The invention discloses a silicon carbide single crystal growth method capable of reducing heater loss, and relates to a silicon carbide single crystal growth method. The method aims at solving the technical problem that in an existing method for growing the silicon carbide single crystals through the PVT method, a graphite crucible is prone to loss. The method comprises the following steps: 1, adopting a silicon carbide single crystal growing device which comprises a graphite heater and a graphite crucible consisting of a crucible upper cover and a crucible main body, placing the graphite crucible in the graphite heater, packing graphite powder in a gap between the graphite crucible and the graphite heater, and compacting the graphite powder; 2, placing a silicon carbide raw material in the crucible main body, pasting a silicon carbide seed crystal on the inner side of the crucible upper cover, covering the crucible main body with the crucible upper cover, and covering the upper surface of the crucible upper cover with a silicon carbide polycrystalline block; and 3, conducting heating and growing to obtain the silicon carbide single crystal. The graphite heater is separated from the graphite crucible, so that the heating efficiency stability of the heater is improved, the crystal growth quality is improved, and the method can be applied to the field of silicon carbide single crystal growth.

Description

technical field [0001] The invention relates to a silicon carbide single crystal growth method. Background technique [0002] At present, physical vapor transport (PVT) is the mainstream preparation method of wide bandgap semiconductor materials. Physical vapor transport (PVT) is a common method used to grow silicon carbide (SiC) single crystals. The steps of this growth method are: the silicon carbide source powder is loaded into the bottom of the graphite crucible, and the silicon carbide seed crystal is fixed on the graphite. The top of the crucible is a closed crucible, in which the silicon carbide source powder at the bottom is in the high temperature zone, and the silicon carbide seed crystal at the top is in the low temperature zone. The SiC seed crystal is crystallized to obtain a SiC single crystal. The graphite crucible is used as a heater and a raw material carrying device at the same time, which leads to the loss of the crucible due to the sublimation of silico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B29/36C30B23/00
Inventor 不公告发明人
Owner 哈尔滨科友半导体产业装备与技术研究院有限公司