Field-effect transistor structure with multiple gate changes, its manufacturing method, and chip device

Abstract

The present invention relates to a multi-gate variable field effect transistor structure, its manufacturing method, and chip device. The transistor includes a drain epitaxial layer on the bottom layer, a source layer on the top layer, and a source extension embedded in the drain epitaxial layer. Inverted fins, first gate and second gate; the first gate is arranged between the source extended inverted fins, the second gate is aligned on the source extended inverted fins, the first gate and the second gate A pair of symmetrical channels connected in parallel from the source layer to the drain epitaxial layer are formed on both sides of each side; in a preferred example, the drain epitaxial layer forms a floating anti-air barrier at the bottom of the extended inverted fin corresponding to the source. Pole bottom junction. The structure of the field effect transistor provided by the present invention is the densification of multi-gate changes, and has the effect of uniformizing the electron flow of the substrate backside drain and the top surface source, and the effect of reducing the slotting process.

Description

technical field [0001] The invention relates to the technical field of semiconductor transistors, in particular to a multi-gate variable field effect transistor structure, a manufacturing method thereof, and a chip device. Background technique [0002] As the key and important device of the semiconductor chip, the field effect transistor structure has a variety of structures, mainly including the following types: FinFET fin field effect transistor, JFET junction field effect transistor, surface field effect transistor, tunneling field effect transistor Transistors trench gate field effect transistor, split gate field effect transistor and super junction field effect transistor. Among them, the structure of FinFET fin field effect transistor, JFET junction field effect transistor, surface field effect transistor and tunneling field effect transistor is to design the source contact and drain contact on the same surface of the semiconductor substrate. With the trend of thinnin...

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Problems solved by technology

[0005] The main purpose of the present invention is to provide a field effect transistor structure with multi-gate changes. The main progress is to solve the problem of uneven distribution of source electron current, product performance and reliability incompatibility, and product The problem of incompatibility between performance and processing difficulty

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