Integrated Micro LED chip and manufacturing method thereof

A manufacturing method and integrated technology, applied to electrical components, electrical solid devices, circuits, etc., can solve problems such as low brightness, low yield, and difficulty in epitaxial growth, so as to save production costs, prevent optical crosstalk, and reduce complexity Effect

Active Publication Date: 2021-08-17
FUJIAN PRIMA OPTOELECTRONICS CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] For integrated Micro LED chips, the biggest problem in achieving full colorization is how to make RGB three-color light sources on the same chip. Currently, there are solutions to grow RGB three-color light-emitting layers on the epitaxial

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integrated Micro LED chip and manufacturing method thereof
  • Integrated Micro LED chip and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0066] Example one

[0067] Please refer to figure 1 , An integrated Micro LED chip manufacturing method, including steps:

[0068] S1, the epitaxial sheet is grown on the substrate layer, the epitaxial sheet comprising a first color epitaxial layer;

[0069] Among them, the first color is blue;

[0070] In an alternative embodiment, the substrate layer 1 is a sapphire substrate (Al2O3);

[0071] Specifically, in the present embodiment, the thickness of the substrate layer is 650 um and one end of the substrate layer forms an epitaxial piece having a gallium nitride buffer layer 2 having a thickness of 2-4 um, and monochrome is prepared on the material of gallium nitride. Blu-ray LED epitaxial tablets, the wavelength of the epitaxial sheet is 400-480 nm;

[0072] S2, a first color light-emitting unit for preparing a preset shape in the side of the first color epitaxial layer;

[0073] Among them, one surface of the first color epitaxial layer is grown from one end of the substrate...

Example Embodiment

[0099] Example 2

[0100] The difference between the embodiment and the first embodiment is that it is further limited how to spray light-colored conversion fluorescent materials:

[0101] Specifically, the light-colored conversion layer positioning hole is provided with four, and is arranged in 2 * 2;

[0102] The light-colored conversion fluorescence material is not sprayed in the portion of the light-colored conversion layer positioning hole and in other regions, the three primary colors are sprayed in the three primary colors, except for the radiological conversion fluorescence of the remaining colors other than the first color. Materials include:

[0103] The light-conducting fluorescent material is not sprayed in a light-colored conversion layer positioning hole, and the red light-colored conversion fluorescent material is sprayed in one or two of the light-colored conversion layer positioning holes, and the light of the remaining number Sprayed green light color conversion ...

Example Embodiment

[0105] Example three

[0106] Embodiment 3 of the present invention is a method of manufacturing an integrated Micro LED chip, including the following steps:

[0107] Step 1, growing blue monochrome GaN epitaxial material, the wavelength range of the epitaxial sheet is 400-475 nm, the substrate is a sapphire substrate (Al2O3);

[0108] Step 2, according to the 2 * 2 matrix shape, the prepared epitaxial sheet is poured, and the partial p-type gallium nitride is removed, and the lower layer of N-type gallium is exposed;

[0109] Step 3, the oxide current expansion layer is prepared, and the indium tin oxide material is used in this example;

[0110] Step 4, a metal current expansion layer and an etching sacrificial layer are prepared, and the TIPTTI alloy metal is used in this example.

[0111] Step 5, preparing an insulating passivation composite layer, the present embodiment is a composite structure of SiO2 and Al2O3, and SiO2 is an insulating layer and a buffer layer in the lower...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an integrated Micro LED chip and a manufacturing method thereof, and the method comprises the steps: growing a first color epitaxial layer on a substrate layer, and preparing a first color light-emitting unit in a preset shape; the patterned shading film is deposited on the face, away from the first color epitaxial layer, of the substrate layer, the patterned shading film is etched, the light color conversion layer positioning holes are formed, and due to the fact that the light emitting units and the positioning holes are generated based on the preset shape, the designed light color units can be separated by combining the light emitting units and the positioning holes; mixed color light is automatically filtered, and light crosstalk is prevented; and the light color conversion fluorescent materials are not sprayed in partial areas of the light color conversion layer positioning holes, the light color conversion fluorescent materials of the other two colors except the first color in the three primary colors are respectively sprayed in other areas, and the blue pixel unit, the red pixel unit and the green pixel unit can be respectively obtained, so that the full color is conveniently realized. And the complexity of the epitaxial structure is reduced, and integration of a large number of pixels can be realized without huge transfer.

Description

technical field [0001] The invention relates to the field of LED manufacturing, in particular to an integrated Micro LED chip and a manufacturing method thereof. Background technique [0002] Micro LED manufacturing technology is currently recognized as the technology with the most development potential and the most market potential in the field of international display technology. At present, there are two ways to realize Micro LED full-color display. The first is to combine RGB three-color single chips into a screen through mass transfer, but the limitations of the mass transfer solution and the bottleneck of transfer speed are many; The second is to manufacture integrated chips, using semiconductor technology to integrate each light-emitting unit into a chip screen. [0003] For integrated Micro LED chips, the biggest problem in achieving full colorization is how to make RGB three-color light sources on the same chip. Currently, there are solutions to grow RGB three-colo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L27/15H01L33/00H01L33/06H01L33/14H01L33/50
CPCH01L27/156H01L33/06H01L33/507H01L33/14H01L33/005H01L2933/0041H01L33/0095H01L33/504H01L33/32H01L33/44H01L33/502H01L33/505H01L33/60H01L2933/0025H01L2933/0058
Inventor 张帆王良旭林少军
Owner FUJIAN PRIMA OPTOELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products