Integrated Micro LED chip and manufacturing method thereof
A manufacturing method and integrated technology, applied to electrical components, electrical solid devices, circuits, etc., can solve problems such as low brightness, low yield, and difficulty in epitaxial growth, so as to save production costs, prevent optical crosstalk, and reduce complexity Effect
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[0066] Example one
[0067] Please refer to figure 1 , An integrated Micro LED chip manufacturing method, including steps:
[0068] S1, the epitaxial sheet is grown on the substrate layer, the epitaxial sheet comprising a first color epitaxial layer;
[0069] Among them, the first color is blue;
[0070] In an alternative embodiment, the substrate layer 1 is a sapphire substrate (Al2O3);
[0071] Specifically, in the present embodiment, the thickness of the substrate layer is 650 um and one end of the substrate layer forms an epitaxial piece having a gallium nitride buffer layer 2 having a thickness of 2-4 um, and monochrome is prepared on the material of gallium nitride. Blu-ray LED epitaxial tablets, the wavelength of the epitaxial sheet is 400-480 nm;
[0072] S2, a first color light-emitting unit for preparing a preset shape in the side of the first color epitaxial layer;
[0073] Among them, one surface of the first color epitaxial layer is grown from one end of the substrate...
Example Embodiment
[0099] Example 2
[0100] The difference between the embodiment and the first embodiment is that it is further limited how to spray light-colored conversion fluorescent materials:
[0101] Specifically, the light-colored conversion layer positioning hole is provided with four, and is arranged in 2 * 2;
[0102] The light-colored conversion fluorescence material is not sprayed in the portion of the light-colored conversion layer positioning hole and in other regions, the three primary colors are sprayed in the three primary colors, except for the radiological conversion fluorescence of the remaining colors other than the first color. Materials include:
[0103] The light-conducting fluorescent material is not sprayed in a light-colored conversion layer positioning hole, and the red light-colored conversion fluorescent material is sprayed in one or two of the light-colored conversion layer positioning holes, and the light of the remaining number Sprayed green light color conversion ...
Example Embodiment
[0105] Example three
[0106] Embodiment 3 of the present invention is a method of manufacturing an integrated Micro LED chip, including the following steps:
[0107] Step 1, growing blue monochrome GaN epitaxial material, the wavelength range of the epitaxial sheet is 400-475 nm, the substrate is a sapphire substrate (Al2O3);
[0108] Step 2, according to the 2 * 2 matrix shape, the prepared epitaxial sheet is poured, and the partial p-type gallium nitride is removed, and the lower layer of N-type gallium is exposed;
[0109] Step 3, the oxide current expansion layer is prepared, and the indium tin oxide material is used in this example;
[0110] Step 4, a metal current expansion layer and an etching sacrificial layer are prepared, and the TIPTTI alloy metal is used in this example.
[0111] Step 5, preparing an insulating passivation composite layer, the present embodiment is a composite structure of SiO2 and Al2O3, and SiO2 is an insulating layer and a buffer layer in the lower...
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