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Integrated Micro LED chip and manufacturing method thereof

A manufacturing method and integrated technology, applied to electrical components, electrical solid devices, circuits, etc., can solve problems such as low brightness, low yield, and difficulty in epitaxial growth, so as to save production costs, prevent optical crosstalk, and reduce complexity Effect

Active Publication Date: 2021-08-17
FUJIAN PRIMA OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] For integrated Micro LED chips, the biggest problem in achieving full colorization is how to make RGB three-color light sources on the same chip. Currently, there are solutions to grow RGB three-color light-emitting layers on the epitaxial layer at the same time, and there are also plans to grow RGB three-color light-emitting layers on the epitaxial layer. However, the above-mentioned solutions all have problems such as difficulty in epitaxial growth, low yield, and low brightness.

Method used

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  • Integrated Micro LED chip and manufacturing method thereof
  • Integrated Micro LED chip and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0067] Please refer to figure 1 , an integrated Micro LED chip manufacturing method, comprising the steps of:

[0068] S1. Growing an epitaxial wafer on the substrate layer, the epitaxial wafer comprising a first color epitaxial layer;

[0069] Wherein, the first color is blue light;

[0070] In an optional embodiment, the substrate layer 1 is a sapphire substrate (Al2O3);

[0071] Specifically, in this embodiment, the thickness of the substrate layer is 650um, and one end of the epitaxial wafer formed from the substrate layer has a gallium nitride buffer layer 2 with a thickness of 2-4um. Blue LED epitaxial wafer, the wavelength of the epitaxial wafer is 400-480nm;

[0072] S2. Prepare a light-emitting unit of the first color with a preset shape on the side of the substrate layer where the epitaxial layer of the first color is grown;

[0073] Wherein, growing the epitaxial layer of the first color on the side of the substrate layer grows a PN junction, a metal oxide curre...

Embodiment 2

[0100] The difference between this embodiment and Embodiment 1 is that it further defines how to spray the light-color conversion fluorescent material:

[0101] Specifically, there are four positioning holes in the light-color conversion layer arranged in a 2*2 arrangement;

[0102] In the partial area of ​​the positioning hole of the light-color conversion layer, the light-color conversion fluorescent material is not sprayed, and the light-color conversion fluorescent materials of the other two colors except the first color among the three primary colors are sprayed in other areas. Materials include:

[0103] No light color conversion fluorescent material is sprayed in one light color conversion layer positioning hole, red light light color conversion fluorescent material is sprayed in one or two of the light color conversion layer positioning holes, and the remaining number of light color conversion fluorescent materials are sprayed. Spray green light and color conversion f...

Embodiment 3

[0106] Embodiment 3 of the present invention is an integrated Micro LED chip manufacturing method, comprising the following steps:

[0107] Step 1, growing blue light monochromatic GaN epitaxial material, the wavelength range of the epitaxial wafer is 400-475nm, and the substrate is sapphire substrate (Al2O3);

[0108] Step 2. Etching the prepared epitaxial wafer on the front side according to the 2*2 matrix shape, removing part of the P-type gallium nitride, and exposing the lower layer of N-type gallium nitride;

[0109] Step 3, prepare the oxide current spreading layer, what this embodiment uses is indium tin oxide material;

[0110] Step 4, preparing a metal current spreading layer and an etching sacrificial layer, TiPtTi alloy metal is used in this embodiment.

[0111] Step 5, prepare the insulating passivation composite layer, what this embodiment uses is the composite structure of SiO2 and Al2O3, SiO2 is the insulation layer and buffer layer in the lower layer, and Al2...

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Abstract

The invention discloses an integrated Micro LED chip and a manufacturing method thereof, and the method comprises the steps: growing a first color epitaxial layer on a substrate layer, and preparing a first color light-emitting unit in a preset shape; the patterned shading film is deposited on the face, away from the first color epitaxial layer, of the substrate layer, the patterned shading film is etched, the light color conversion layer positioning holes are formed, and due to the fact that the light emitting units and the positioning holes are generated based on the preset shape, the designed light color units can be separated by combining the light emitting units and the positioning holes; mixed color light is automatically filtered, and light crosstalk is prevented; and the light color conversion fluorescent materials are not sprayed in partial areas of the light color conversion layer positioning holes, the light color conversion fluorescent materials of the other two colors except the first color in the three primary colors are respectively sprayed in other areas, and the blue pixel unit, the red pixel unit and the green pixel unit can be respectively obtained, so that the full color is conveniently realized. And the complexity of the epitaxial structure is reduced, and integration of a large number of pixels can be realized without huge transfer.

Description

technical field [0001] The invention relates to the field of LED manufacturing, in particular to an integrated Micro LED chip and a manufacturing method thereof. Background technique [0002] Micro LED manufacturing technology is currently recognized as the technology with the most development potential and the most market potential in the field of international display technology. At present, there are two ways to realize Micro LED full-color display. The first is to combine RGB three-color single chips into a screen through mass transfer, but the limitations of the mass transfer solution and the bottleneck of transfer speed are many; The second is to manufacture integrated chips, using semiconductor technology to integrate each light-emitting unit into a chip screen. [0003] For integrated Micro LED chips, the biggest problem in achieving full colorization is how to make RGB three-color light sources on the same chip. Currently, there are solutions to grow RGB three-colo...

Claims

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Application Information

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IPC IPC(8): H01L27/15H01L33/00H01L33/06H01L33/14H01L33/50
CPCH01L27/156H01L33/06H01L33/507H01L33/14H01L33/005H01L2933/0041H01L33/0095H01L33/504H01L33/32H01L33/44H01L33/502H01L33/505H01L33/60H01L2933/0025H01L2933/0058
Inventor 张帆王良旭林少军
Owner FUJIAN PRIMA OPTOELECTRONICS CO LTD
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