Film layer removing process for silicon-based OLED micro-display device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD
- Publication Date
- 2021-08-24
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Abstract
Description
technical field
[0001] The invention relates to the technical field of preparation of a silicon-based OLED microdisplay device, in particular to a process for removing a film layer of a silicon-based OLED microdisplay device. Background technique
[0002] At present, due to the vigorous development of the micro-display industry, silicon-based OLED micro-display devices have received extensive attention, and the methods for their fabrication are also being continuously explored and improved. In the manufacturing process of silicon-based OLED micro-display devices, in the display module preparation section, it is necessary to attach each die in the wafer to a PCB or FPC. The base layer is exposed, and the remaining film layers cannot be placed.
[0003] Therefore, before the module process, it is necessary to remove the high-temperature SiOx film layer and the packaging film layer above the wiring area. The process of removing the above film layer is currently conventionally...