Unlock instant, AI-driven research and patent intelligence for your innovation.

Micro-LED display device and preparation method thereof

A display device and light-emitting element technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of equipment stability and display resolution, waste of the underlying luminescent material layer, complex device preparation process, etc., to achieve Achieve large-scale batch production, low cost and simple process

Pending Publication Date: 2021-08-31
FUDAN UNIV
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this technology is that in the welding and bonding of epitaxial materials of different colors, the underlying luminescent material layer will be partially wasted, and due to the addition of welding other epitaxial materials, the device preparation process is more complicated, and the prepared micro-LED transfer unit It still needs to be integrated with the circuit board through mass transfer technology
However, due to the limitation of size, the low transfer accuracy of this method will affect the stability of the device and the resolution of the display, and with the further reduction of LED size and the increase of transfer quantity and density, this method will also getting more and more difficult

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro-LED display device and preparation method thereof
  • Micro-LED display device and preparation method thereof
  • Micro-LED display device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] Step 1: Provide a sapphire substrate. The sapphire substrate is a 2-inch circular substrate, and a U-GaN buffer layer 3 and an n-GaN layer 4 are sequentially grown on the sapphire substrate 1 by using MOCVD growth equipment.

[0060] Step 2: Use the sapphire substrate that has grown part of the epitaxial material in the above step 1 as the original substrate, and deposit SiO on the original substrate 2 Passivation layer, so that the passivation layer covers the entire surface of the original substrate, and then, spin-coated photoresist layer, covering the entire SiO 2 passivation layer.

[0061] Step 3: Perform patterning photolithography on the epitaxial wafer that has been partially prepared in the above step 2, and perform hole opening treatment on the original substrate part where the epitaxial material is to be selectively grown. The size of the hole is 2-100 microns, and the hole position is the first epitaxial region.

[0062] Step 4: Perform ICP etching on the...

Embodiment 2

[0073] Step 1: Provide a SiC substrate. The SiC substrate is a rectangular substrate of 10mm×15mm, and a U-GaN buffer layer and an n-GaN layer are sequentially grown on the SiC substrate by using MOCVD growth equipment.

[0074] Step 2: Use the SiC substrate that has grown part of the epitaxial material in the above step 1 as the original substrate, and deposit SiO on the original substrate 2 Passivation layer, so that the passivation layer covers the entire surface of the original substrate, and then, spin-coated photoresist layer, covering the entire SiO 2 passivation layer.

[0075] Step 3: Perform patterning photolithography on the epitaxial wafer that has been partially prepared in the above step 2, and perform hole opening treatment on the original substrate part where the epitaxial material is to be selectively grown. The size of the hole is 2-100 microns, and the hole position is the first epitaxial region.

[0076] Step 4: Perform ICP etching on the epitaxial wafer ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a micro-LED display device and a preparation method thereof, and the preparation method comprises the steps: providing a substrate, and sequentially growing a U-GaN buffer layer and an n-GaN layer on the substrate; growing a plurality of light-emitting elements; and performing post-processing. The step of growing the light-emitting element comprises the following steps: deposition: depositing a dielectric material on the n-GaN layer to form a passivation layer, and coating a photoresist layer to cover the passivation layer; removing: performing photoetching treatment on the photoresist layer to form a plurality of holes serving as an epitaxial region, etching the dielectric material in the epitaxial region, and removing the residual photoresist layer; growing: growing a plurality of light-emitting elements in the epitaxial region, and circulating the deposition-removal-growth steps to sequentially obtain a plurality of first light-emitting elements, second light-emitting elements and third light-emitting elements respectively. The method provided by the invention is low in cost, high in reliability and high in stability, and large-scale batch production of the micro-LED display device can be realized.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a micro-LED display device and a preparation method thereof. Background technique [0002] High-performance Ⅲ-Ⅴ nitride LEDs have achieved great success in the fields of display, solid-state lighting, and communication. The micro-LED (miniature light-emitting diode) new display device obtained by miniaturizing LED is called "ultimate display technology". With the advantages of high brightness, low power consumption, and good reliability, its performance is much higher than that of existing LCD and OLED display devices, and it has broad application prospects in the fields of micro-projection, transparent display, and head-up display. [0003] The realization of micro-LED display requires three primary color light sources. At present, there are two main schemes for micro-LED color display technology: (1) use a single-color micro-LED array, and coat the color co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/00H01L33/06H01L33/12H01L33/32H01L27/15
CPCH01L33/007H01L33/12H01L33/0012H01L33/06H01L33/32H01L27/156
Inventor 田朋飞袁泽兴崔旭高顾而丹
Owner FUDAN UNIV