Surface acoustic wave device

A surface acoustic wave and area technology, applied to electrical components, impedance networks, etc., can solve problems such as failure to meet 5G high power requirements, filter failure, and reduced durability, and achieve improved anti-electromigration performance and increased power tolerance , Durability

Pending Publication Date: 2021-09-03
北京超材信息科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This has led to the inability of SAW filters on the market to meet the high power requirements of 5G
[0004] In addition, as the frequency of the device increases, the lines of the IDT (Interdigital transducer) electrodes will become thinner, and the repetitive stress from the surface acoustic wave will increase sharply with the increase of the frequency, resulting in the failure of the filter. Therefore, in the SAW filter When the maximum withstand power increases, the durability will decrease,

Method used

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Examples

Experimental program
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specific Embodiment approach

[0037] (1) Embodiment one

[0038] Such as figure 1 As shown, the present embodiment provides a surface acoustic wave device, including a piezoelectric substrate 101 and an IDT electrode 102. The piezoelectric substrate can be a piezoelectric substrate such as quartz (SiO2), lithium niobate (LiNbO3) or lithium tantalate (LiTaO3). crystals.

[0039] The IDT electrode 102 includes a first buffer layer 102-1 disposed on the piezoelectric substrate and a first metal layer 102-2 disposed on the first buffer layer 102-1.

[0040] The first buffer layer 102-1 includes metal titanium, and when the wavelength of the elastic wave determined by the electrode period of the IDT electrode is λ, the thickness of the first buffer layer is 0.5% λ or less. The first metal layer 102-2 includes metal aluminum, and the thickness of the aluminum layer is in the range of 1%λ-30%λ.

[0041] Using metal titanium as the buffer layer is beneficial to form a strong Al(111) texture on the Al thin film ...

Embodiment 2

[0054] Such as image 3 As shown, this embodiment provides a surface acoustic wave device, including a piezoelectric substrate 201 and an IDT electrode 202, and the IDT electrode 202 includes a first buffer layer 202-1 disposed on the piezoelectric substrate and a first buffer layer 202-1 disposed on the first buffer layer 202. -1 on the first metal layer 202-2. A passivation layer 203 is provided on the IDT electrode 202 . The structures and components of the piezoelectric substrate 201 and the IDT electrodes 202 in this embodiment are the same as those in the first embodiment.

[0055] The passivation layer 203 includes silicon oxide, and the relationship between the thickness of the passivation layer and the thickness of each layer in the IDT electrode is determined by the following formula:

[0056] Hp=T1*Hb1+T3*Hm1+T5*Hs

[0057] Wherein, Hp is the thickness of the passivation layer, Hb1 is the thickness of the first buffer layer 202-1; T1 is the temperature compensati...

Embodiment 3

[0064] Such as Figure 4 As shown, the present embodiment provides a surface acoustic wave device, including a piezoelectric substrate 301 and an IDT electrode 302. The piezoelectric substrate can be a piezoelectric substrate such as quartz (SiO2), lithium niobate (LiNbO3) or lithium tantalate (LiTaO3). crystals.

[0065] The IDT electrode 302 in the surface acoustic wave device provided in this embodiment includes a four-layer structure, which can improve the withstand power of the surface acoustic wave device.

[0066] In this embodiment, the IDT electrode 302 includes a first buffer layer 302-1 disposed on the piezoelectric substrate, a first metal layer 302-2 disposed on the first buffer layer 302-1, and a first metal layer 302-2 disposed on the first metal layer The second buffer layer 302-1' on the second buffer layer 302-2', and the second metal layer 302-2' disposed on the second buffer layer 302-1'.

[0067] The first buffer layer 302-1 includes metal titanium, and ...

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Abstract

The invention provides a surface acoustic wave device. The surface acoustic wave device comprises a piezoelectric substrate; an IDT electrode provided on the piezoelectric substrate, the IDT electrode including: a first buffer layer provided on the piezoelectric substrate, the first buffer layer including metallic titanium, and the thickness of the first buffer layer being 0.5% lambda or less when lambda is a wavelength of an elastic wave determined by an electrode period of the IDT electrode; the first metal layer is arranged on the surface, away from the piezoelectric substrate, of the first buffer layer, the first metal layer comprises aluminum, and the thickness of the first metal layer ranges from 1% lambda to 30% lambda. According to the surface acoustic wave device, the electromigration resistance of Al can be improved, the tolerance power of the surface acoustic wave device can be improved, the durability can be considered, the frequency temperature coefficient of the surface acoustic wave device can be reduced, and the temperature stability of the surface acoustic wave device can be improved.

Description

technical field [0001] The present invention relates to the field of surface acoustic wave technology, in particular to a surface acoustic wave device. Background technique [0002] Among the key indicators of SAW filters, there are two main categories, one is small signal parameters, and the other is power indicators. Among them, the small signal parameters, namely S parameters, characterize the performance of the device in actual use, and the power index mainly refers to the maximum withstand power of the device (burning critical power). [0003] At present, the maximum withstand power supported by SAW filters can only meet the power requirements of mobile phone clients and Internet of Things clients under 4G. Under the requirements of 5G, the power requirements of frequency bands such as B41 have increased compared with 4G. As a result, the SAW filters on the market cannot meet the high power requirements of 5G. [0004] In addition, as the frequency of the device incr...

Claims

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Application Information

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IPC IPC(8): H03H9/64H03H9/02H03H9/145
CPCH03H9/64H03H9/02834H03H9/02929H03H9/145
Inventor 王阳陆彬曹庭松吴洋洋
Owner 北京超材信息科技有限公司
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