hybrid imaging structure
An imaging and interconnection structure technology, applied in the field of microelectronics, can solve the problems of increased cost, large overall size of the substrate, unreasonable layout, etc., and achieve the effects of reducing the overall size, improving performance, and reasonable structural layout
Active Publication Date: 2021-11-16
西安中科立德红外科技有限公司
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Problems solved by technology
[0004] However, the layout of the above-mentioned hybrid imaging chip structure on the substrate is unreasonable, resulting in a large overall size of the substrate and increasing the cost.
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[0071] As described in the background art, in the related art, a microbridge structure and a cantilever beam structure are fabricated above the substrate, the circuit processing module is located below the substrate, and a groove is arranged above the substrate, and a lower electrode is formed in the groove, and the lower electrode and the plate electrodes on the micro-bridge structure form a plate capacitance. However, the above-mentioned setting method has the following problems: the groove occupies a large space of the substrate, which makes it impossible to manufacture circuit processing modules in the substrate, thus making the structural layout on the substrate unreasonable, increasing the overall size of the substrate, and increasing the cost .
[0072] In view of the above technical problems, an embodiment of the present application provides a hybrid imaging structure, by arranging the first interconnection structure on the first side of the substrate, the vertical ele...
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Abstract
This application provides a hybrid imaging structure, which relates to the field of microelectronics technology, and is used to solve the technical problems that the existing hybrid imaging chip structure has an unreasonable layout on the substrate, which leads to a larger overall size of the substrate and increases the cost. The imaging structure includes a first interconnection structure, the first interconnection structure is located on the surface of the first side of the substrate; a visible light detection device, the visible light detection device is located in the accommodating cavity and arranged close to the second side, the visible light detection device and the first side An interconnect structure is electrically connected; the visible light detection device includes at least one N-type doped region and at least two P-type doped regions connected to each other, and at least one N-type doped region is located between the at least two P-type doped regions a plurality of vertical electrodes, the plurality of vertical electrodes are arranged at intervals on the side of the first interconnection structure away from the substrate. The application can make the structural layout on the substrate more reasonable, reduce the overall size of the substrate and reduce the cost.
Description
technical field [0001] The present application relates to the technical field of microelectronics, in particular to a hybrid imaging structure. Background technique [0002] With the development of industry and living standards, pure infrared imaging or pure visible light imaging can no longer meet the demand. Imaging technologies with wider wavelength bands have attracted more and more attention, especially imaging technologies that are sensitive to visible light and infrared light at the same time. [0003] The hybrid imaging technology on the market generally adopts a chip integration solution, integrating visible light and long-wavelength imaging processing chips together. The structure of the hybrid imaging chip specifically includes: a substrate as a visible light filter layer; a long-wavelength photosensitive region and a visible light sensitive region respectively located on the upper and lower surfaces of the substrate; A circuit processing module that calculates a...
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IPC IPC(8): H01L27/146G01J1/42
CPCH01L27/14634H01L27/14636H01L27/14603H01L27/14605G01J1/42
Inventor 刘伟郭得福王鹏段程鹏马仁旺欧秦伟
Owner 西安中科立德红外科技有限公司