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Magnetic heterostructure based on electric field regulation and control and preparation method ofmagnetic heterostructure

A technology of heterostructure and electric field regulation, applied in the manufacture/processing of electromagnetic devices, the selection of parts and materials of electromagnetic equipment, etc., can solve problems such as unfavorable permanent storage of data, and achieve fast magnetic switching speed and high reliability. , the effect of improving the efficiency of ion transport

Active Publication Date: 2021-09-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the reliability and non-volatility of electronically controlled ion migration still need to be strengthened. Although the hydrogen ion migration has achieved more than 2000 cycles at a relatively fast speed, the storage time of the device can only last for a few days when the power is off. It is beneficial for permanent data storage, and although the heavy metal lead used as a hydrogen storage material has high hydrogen mobility, it is prone to hydrogen jetting under vacuum or high temperature conditions. It is foreseeable to look for better quality hydrogen in the migration of hydrogen ions Storage materials will be the next big challenge

Method used

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  • Magnetic heterostructure based on electric field regulation and control and preparation method ofmagnetic heterostructure

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Embodiment 1

[0033] In this embodiment, a heterostructure based on electric field regulation includes a gadolinium gallium garnet (GGG) single crystal substrate, a bottom electrode layer of platinum (Pt) formed on the substrate, and a yttrium layer formed on the bottom electrode in turn. Iron garnet (YIG) magnetic film / MXene (Ti 3 C 2 T X ) thin film heterojunction and top electrode layer chromium / gold (Cr / Au).

[0034] Apply a positive bias voltage on the top electrode layer to ensure that the electric field strength is greater than 0.02V / nm and at the same time less than 0.5 V / nm, the water molecules absorbed from the air will undergo hydrolysis reaction on the electrode surface, and the oxygen in it will diffuse to the atmosphere , and the generated hydrogen atoms will be stored in the MXene film, the concentration of hydrogen atoms depends on the magnitude and time of the applied bias voltage, and because the magnetic anisotropy of the magnetic film is very sensitive to the concentra...

Embodiment 2

[0045] In this embodiment, a heterostructure based on electric field regulation includes a gadolinium gallium garnet (GGG) single crystal substrate, a bottom electrode layer of platinum (Pt) formed on the substrate, and a yttrium layer formed on the bottom electrode in turn. Iron garnet (YIG) magnetic film / MXene (Ti 2 CT X ) thin film heterojunction and top electrode layer chromium / gold (Cr / Au).

[0046] The preparation process of the above-mentioned heterostructure based on electric field regulation is as follows: figure 2 As shown, specifically:

[0047] Step 1. Sonicate the GGG single crystal substrate with acetone, alcohol and deionized water for 10 minutes in sequence;

[0048] Step 2, using the DC magnetron sputtering method, growing a Pt film with a thickness of 2 to 10 nm on the substrate cleaned in step 1 as the bottom electrode layer;

[0049] Step 3. Deposit a layer of YIG film with a thickness of 200-400nm on the basis of step 2 by using the pulsed laser depos...

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Abstract

The invention discloses a magnetic heterostructure based on electric field regulation and control and a preparation method of the magnetic heterostructure, and belongs to the field of preparation of magnetoelectric coupling materials and devices. The magnetic heterostructure comprises a substrate, a bottom electrode layer formed on the substrate, a heterojunction formed on the bottom electrode layer, and a top electrode layer formed on the heterojunction; and the heterojunction is a magnetic thin film / MXene heterojunction, and the magnetic thin film and the MXene thin film are stacked up and down. According to the heterostructure, voltage is applied in the vertical direction through the bottom electrode layer and the top electrode layer, so that directional movement of hydrogen ions in the magnetic film / MXene heterojunction is realized, and the hydrogen ions are converted into hydrogen atoms to be stored in the MXene film. The magnetic anisotropy of the magnetic film is very sensitive to the concentration of the hydrogen atoms adsorbed on the surface, so that the magnetic film can be regulated and controlled by external voltage, the hydrogen atoms are quickly diffused into the atmosphere after the bias voltage is removed, and the magnetism of the film is recovered to the original state.

Description

technical field [0001] The invention belongs to the field of magnetoelectric coupling materials and device preparation, and in particular relates to a magnetic heterogeneous structure based on electric field regulation and a preparation method thereof. Background technique [0002] Electric field control material magnetism can be seen in many material systems. For example, in ferromagnetic materials, the magnetic adjustment is performed by changing the number and density of charge carriers, while in multiferroic materials, the electric polarization and magnetization of the applied electric field occur. coupling. In addition, another voltage-controlled magnetic anisotropy effect, which generally occurs in ferromagnetic metal / metal oxide structures, can be interpreted as the electrochemical reaction of the film, that is, the directional ion migration of the film under the action of an applied electric field, in the A reversible transition in magnetism is accomplished during t...

Claims

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Application Information

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IPC IPC(8): H01L43/10H01L43/02H01L43/12
CPCH10N50/80H10N50/01H10N50/85
Inventor 金立川徐嘉鹏徐鑫锴张怀武唐晓莉向全军钟智勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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