Magnetic heterostructure based on electric field regulation and control and preparation method ofmagnetic heterostructure
A technology of heterostructure and electric field regulation, applied in the manufacture/processing of electromagnetic devices, the selection of parts and materials of electromagnetic equipment, etc., can solve problems such as unfavorable permanent storage of data, and achieve fast magnetic switching speed and high reliability. , the effect of improving the efficiency of ion transport
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Embodiment 1
[0033] In this embodiment, a heterostructure based on electric field regulation includes a gadolinium gallium garnet (GGG) single crystal substrate, a bottom electrode layer of platinum (Pt) formed on the substrate, and a yttrium layer formed on the bottom electrode in turn. Iron garnet (YIG) magnetic film / MXene (Ti 3 C 2 T X ) thin film heterojunction and top electrode layer chromium / gold (Cr / Au).
[0034] Apply a positive bias voltage on the top electrode layer to ensure that the electric field strength is greater than 0.02V / nm and at the same time less than 0.5 V / nm, the water molecules absorbed from the air will undergo hydrolysis reaction on the electrode surface, and the oxygen in it will diffuse to the atmosphere , and the generated hydrogen atoms will be stored in the MXene film, the concentration of hydrogen atoms depends on the magnitude and time of the applied bias voltage, and because the magnetic anisotropy of the magnetic film is very sensitive to the concentra...
Embodiment 2
[0045] In this embodiment, a heterostructure based on electric field regulation includes a gadolinium gallium garnet (GGG) single crystal substrate, a bottom electrode layer of platinum (Pt) formed on the substrate, and a yttrium layer formed on the bottom electrode in turn. Iron garnet (YIG) magnetic film / MXene (Ti 2 CT X ) thin film heterojunction and top electrode layer chromium / gold (Cr / Au).
[0046] The preparation process of the above-mentioned heterostructure based on electric field regulation is as follows: figure 2 As shown, specifically:
[0047] Step 1. Sonicate the GGG single crystal substrate with acetone, alcohol and deionized water for 10 minutes in sequence;
[0048] Step 2, using the DC magnetron sputtering method, growing a Pt film with a thickness of 2 to 10 nm on the substrate cleaned in step 1 as the bottom electrode layer;
[0049] Step 3. Deposit a layer of YIG film with a thickness of 200-400nm on the basis of step 2 by using the pulsed laser depos...
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