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Fast compact XOR gate circuit

A gate circuit, fast technology, applied in the direction of XOR circuit, logic circuit, logic circuit with logic function, etc., can solve the problems of large number of transistors, high power consumption, slow speed, etc.

Pending Publication Date: 2021-09-10
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problems of large number of transistors, slow speed and high power consumption in the existing XOR gate circuit, the present invention proposes a fast and compact XOR gate circuit

Method used

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Embodiment Construction

[0016] Below in conjunction with accompanying drawing, technical solution of the present invention is described in detail:

[0017] like figure 2 Shown is a circuit diagram of a fast and compact XOR gate proposed by the present invention, including six NMOS transistors and four PMOS transistors.

[0018] The components of the XOR gate circuit PMOS transistors include a first PMOS transistor MP1, a second PMOS transistor MP2, a third PMOS transistor MP3, and a fourth PMOS transistor MP4; wherein, the third PMOS transistor MP3 and the fourth PMOS transistor MP4 form an intersection Coupling structure, this structure can improve the transmission speed of the circuit; the components of the NMOS tube include the first NMOS tube MN1, the second NMOS tube MN2, the third NMOS tube NM3, the fourth NMOS tube MN4, the fifth NMOS tube MN5, the sixth NMOS tube MN6.

[0019] Transistors related to the input signal A: the gates of the first PMOS transistor MP1, the first NMOS transistor M...

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Abstract

The invention belongs to the technical field of integrated circuits, and particularly relates to a fast compact XOR gate circuit. Compared with the prior art, the exclusive-OR gate logic circuit is mainly realized by using six NMOS (N-channel Metal Oxide Semiconductor) transistors and four PMOS (P-channel Metal Oxide Semiconductor) transistors, and two PMOS transistors form a cross coupling structure to realize an exclusive-OR gate circuit, so that the use quantity of the transistors is reduced, the length of a signal transmission chain is shortened, the power consumption is reduced, the area is saved, wherein the two PMOS transistors adopt a cross coupling structure, so that the circuit speed is improved.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a fast and compact XOR gate circuit. Background technique [0002] With the rapid development of integrated circuit technology, the integrated circuit industry has entered the nanometer era, the scale of the circuit continues to increase, the required circuit speed is getting faster and faster, the leakage power of the integrated circuit is also increasing, and the temperature of the chip is rising. , not only reduces the stability of the chip, but also puts forward higher requirements for packaging and heat dissipation. Improving circuit transmission speed and reducing circuit power consumption have become key technical issues. [0003] The XOR gate circuit is an important gate circuit in digital design, and it is widely used in functional modules such as binary code to Gray code circuit, parity judgment circuit, and counter circuit. Improving the speed...

Claims

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Application Information

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IPC IPC(8): H03K19/21H03K19/017
CPCH03K19/215H03K19/017H03K19/0013
Inventor 周泽坤孙启元许王帅王卓张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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