Infrared detector with multi-layer structure based on CMOS (Complementary Metal Oxide Semiconductor) process

An infrared detector and multi-layer structure technology, applied in the field of infrared detection, can solve the problems of low performance of infrared detectors, reduction of thermal conductivity of beam structures, low pixel scale, etc., and achieve high detection sensitivity, reduced transportation costs, small Die area effect

Active Publication Date: 2021-09-24
BEIJING NORTH GAOYE TECH CO LTD
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Problems solved by technology

[0010] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides a multi-layer structure infrared detector based on CMOS technology, which solves the problem of low performance,

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  • Infrared detector with multi-layer structure based on CMOS (Complementary Metal Oxide Semiconductor) process
  • Infrared detector with multi-layer structure based on CMOS (Complementary Metal Oxide Semiconductor) process
  • Infrared detector with multi-layer structure based on CMOS (Complementary Metal Oxide Semiconductor) process

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[0087] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other.

[0088] In the following description, many specific details are set forth in order to fully understand the present disclosure, but the present disclosure can also be implemented in other ways than described here; obviously, the embodiments in the description are only some of the embodiments of the present disclosure, and Not all examples.

[0089] figure 1 A schematic diagram of a three-dimensional structure of an infrared detector pixel provided by an embodiment of the present disclosure, figure 2 A schematic cross-sectional structure diagram of an infrared detector pixel provided by an embodiment of the present disclosure. com...

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Abstract

The invention relates to an infrared detector with a multilayer structure based on a CMOS (complementary metal oxide semiconductor) process, a CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using the CMOS process, and the CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD (in-mold decoration) process and an RDL (redistribution layer) process; in the infrared detector with the multi-layer structure, a first columnar structure comprises at least one layer of solid columnar structure and/or at least one layer of hollow columnar structure, a second columnar structure comprises at least one layer of solid columnar structure and/or at least one layer of hollow columnar structure, at least one hole-shaped structure is formed in an absorption plate, and the hole-shaped structure at least penetrates through a dielectric layer in the absorption plate; and/or at least one hole-shaped structure is formed on a beam structure. The infrared detector is advantaged in that problems of low performance, low pixel scale, low yield and poor consistency of a traditional MEMS process infrared detector are solved, the planarization degree of the absorption plate is optimized, thermal conductivity of the beam structure is reduced, and the performance of the infrared detector is optimized.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an infrared detector with a multi-layer structure based on a CMOS process. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensing str...

Claims

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Application Information

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IPC IPC(8): G01J5/24
CPCG01J5/24Y02P70/50
Inventor 翟光杰武佩潘辉翟光强
Owner BEIJING NORTH GAOYE TECH CO LTD
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