Infrared detector with multi-layer structure based on CMOS (Complementary Metal Oxide Semiconductor) process

Abstract

The invention relates to an infrared detector with a multilayer structure based on a CMOS (complementary metal oxide semiconductor) process, a CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using the CMOS process, and the CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD (in-mold decoration) process and an RDL (redistribution layer) process; in the infrared detector with the multi-layer structure, a first columnar structure comprises at least one layer of solid columnar structure and / or at least one layer of hollow columnar structure, a second columnar structure comprises at least one layer of solid columnar structure and / or at least one layer of hollow columnar structure, at least one hole-shaped structure is formed in an absorption plate, and the hole-shaped structure at least penetrates through a dielectric layer in the absorption plate; and / or at least one hole-shaped structure is formed on a beam structure. The infrared detector is advantaged in that problems of low performance, low pixel scale, low yield and poor consistency of a traditional MEMS process infrared detector are solved, the planarization degree of the absorption plate is optimized, thermal conductivity of the beam structure is reduced, and the performance of the infrared detector is optimized.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an infrared detector with a multi-layer structure based on a CMOS process. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensing str...

AI Technical Summary

Problems solved by technology

[0010] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides a multi-layer structure infrared detector based on CMOS technology, which solves the problem of low performance, low pixel scale and low yield rate of traditional MEMS technology infrared detectors. Low and poor consistency, optimize the planarization of the absorbing plate, reduce the thermal conductivity of the beam structure, and optimize the performance of the infrared detector

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