A kind of organic electroluminescent device and display device
A technology for electroluminescent devices and organic light-emitting layers, which can be used in electro-solid devices, electrical components, semiconductor devices, etc., and can solve the problems of large roll-off of device efficiency, inability of phosphorescent materials to become dyes, and high cost.
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[0106] The present invention also provides a preparation method of the organic electroluminescent device, to figure 1 As an example, it includes sequentially depositing an anode 2 , a hole transport region 3 , an organic light-emitting layer 4 , an electron transport region 5 , and a cathode 6 on a substrate 1 , and then packaging. Wherein, when preparing the organic light-emitting layer 4, the organic light-emitting layer 4 is formed by co-evaporating a wide bandgap material source, an electron donor material source, an electron acceptor material source and a resonant TADF material source.
[0107] Specifically, the preparation method of the organic electroluminescent device of the present invention comprises the following steps:
[0108] 1. Ultrasonically treat the glass plate coated with the anode material in a commercial cleaning agent, rinse in deionized water, ultrasonically degrease in acetone: ethanol mixed solvent, bake in a clean environment until the water is comple...
Embodiment 1
[0119] The device structure of this embodiment is as follows:
[0120] ITO / HATCN(5nm) / NPB(30nm) / W1:0.5wt% F-55(30nm) / DPyPA:Liq(30nm) / LiF(0.5nm) / Al(150nm).
[0121] The glass plate coated with the ITO transparent conductive layer is ultrasonically treated in a commercial cleaning agent, rinsed in deionized water, ultrasonically degreased in acetone: ethanol mixed solvent, baked in a clean environment until the water is completely removed, and then cleaned with ultraviolet light. Light and ozone cleaning, and bombardment of the surface with a beam of low-energy cations;
[0122] HATCN was vacuum evaporated on the ITO transparent conductive layer as the hole injection layer of the device, the evaporation rate was 0.1nm / s, and the total film thickness was 5nm;
[0123] On the hole injection layer, NPB was vacuum evaporated as the hole transport layer of the device, the evaporation rate was 0.1nm / s, and the total film thickness was 30nm;
[0124] The light-emitting layer of the d...
Embodiment 2
[0129] The device structure of this embodiment is as follows:
[0130]ITO / HATCN(5nm) / NPB(30nm) / W1:1 wt% F-55(30nm) / DPyPA:Liq(30nm) / LiF(0.5nm) / Al(150nm).
[0131] The meaning of the device is roughly the same as that of Example 1, the only difference is that the dye concentration of the organic light-emitting layer is different.
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