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Semiconductor element and manufacturing method thereof

A semiconductor and component technology, applied in the field of manufacturing magnetoresistive random access memory components, can solve the problems of chip area, insufficient sensitivity, and susceptibility to temperature changes

Active Publication Date: 2021-10-01
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantages of the prior art of the above-mentioned technologies generally include: larger chip area, more expensive manufacturing process, more power consumption, insufficient sensitivity, and susceptibility to temperature changes, etc., and it is necessary to further improve

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  • Semiconductor element and manufacturing method thereof
  • Semiconductor element and manufacturing method thereof
  • Semiconductor element and manufacturing method thereof

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Embodiment Construction

[0043] Please refer to Figure 1 to Figure 5 , Figure 1 to Figure 3 Top view of a semiconductor device, or more specifically an MRAM cell, fabricated for various embodiments of the present invention, Figure 4 for figure 2 and image 3 A schematic cross-sectional view of making a semiconductor element along the tangent line AA', Figure 5 then figure 1 A schematic cross-sectional view of a semiconductor element fabricated along the tangent line BB'. like Figure 1 to Figure 5 As shown, first a substrate 12 is provided, such as a substrate 12 made of semiconductor material, wherein the semiconductor material can be selected from silicon, germanium, silicon germanium compound, silicon carbide (silicon carbide), gallium arsenide (gallium arsenide) etc., and a MRAM area 14 and a logic area 16 are preferably defined on the substrate 12 .

[0044] The substrate 12 may include active (active) elements such as metal-oxide semiconductor (MOS) transistors, passive (passive) ele...

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Abstract

The invention discloses a method for manufacturing a semiconductor element. The method includes the following steps: providing a substrate including a logic region and a magnetoresistive random access memory (MRAM) region, then forming a magnetic tunnel junction (MTJ) on the MRAM region, forming a metal interconnect on the MTJ, forming a dielectric layer on the metal interconnect, patterning the dielectric layer to form a plurality of openings, forming a barrier layer on the patterned dielectric layer and the metal interconnects, and filling the openings.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor element, in particular to a method for manufacturing a magnetoresistive random access memory (MRAM) element. Background technique [0002] It is known that the magnetoresistance (MR) effect is the effect that the resistance of the material changes with the change of the applied magnetic field. The definition of its physical quantity is the resistance difference under the presence or absence of a magnetic field divided by the original resistance, which is used to represent the resistance change. Rate. At present, the magnetoresistance effect has been successfully used in the production of hard disks, and has important commercial application value. In addition, using the characteristics of giant magnetoresistance materials having different resistance values ​​in different magnetization states, it can also be made into magnetic random access memory (MRAM), which has the advantage that it...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/22H01L43/08H01L43/12H10N50/80H10N50/01H10N50/10
CPCH10B61/00H10B61/22H10N50/01H10N50/10H10N50/85G11C11/161H10N50/80H01F10/3254H01F41/34H01L23/5226H01L23/528
Inventor 吴家荣张翊凡黄瑞民蔡雅卉王裕平
Owner UNITED MICROELECTRONICS CORP