Heterojunction battery and preparation method thereof
A technology of heterojunction cells and conductive type, which is applied in circuits, photovoltaic power generation, electrical components, etc., and can solve the problems that the photoelectric conversion efficiency of heterojunction cells needs to be improved.
Active Publication Date: 2021-10-01
ANHUI HUASUN ENERGY CO LTD
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Problems solved by technology
[0004]
The technical problem to be solved by the present invention is to overcome the problem that the photoelectric conversion efficiency of heterojunction cells needs to be improved in the prior art
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preparation example Construction
[0035] The embodiment of the present invention provides a preparation method of a heterojunction battery, please refer to figure 1 , including the following steps:
[0036] S1: providing a semiconductor substrate layer;
[0037] S2: Etching the front and back of the semiconductor substrate layer, so that at least the back of the semiconductor substrate layer is a smooth surface;
[0038] S3: After etching the front and back sides of the semiconductor substrate layer, a protective layer is formed on the back side of the semiconductor substrate layer;
[0039] S4: using the protective layer as a mask, performing texturing on the front side of the semiconductor substrate layer, where the front side of the semiconductor substrate layer is an anti-reflection textured surface;
[0040] S5: After the texturing treatment is performed on the front side of the semiconductor substrate layer, the protective layer is removed;
[0041]S6: After removing the protective layer, form a first...
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Abstract
The invention discloses a heterojunction battery and a preparation method thereof. The preparation method of the heterojunction battery comprises the following steps of providing a semiconductor substrate layer, carrying out corrosion treatment on the front surface and the back surface of the semiconductor substrate layer so as to enable at least the back surface of the semiconductor substrate layer to be a smooth surface, after the front surface and the back surface of the semiconductor substrate layer are subjected to corrosion treatment, forming a protective layer on the back surface of the semiconductor substrate layer, with the protective layer as a mask, conducting texturing processing on the front surface of the semiconductor substrate layer, wherein the front surface of the semiconductor substrate layer is an antireflection textured surface, then, removing the protective layer, then, forming a first doped semiconductor layer on one side of the front surface of the semiconductor substrate layer, and forming a second doped semiconductor layer on one side of the back surface of the semiconductor substrate layer, wherein the conduction type of the second doped semiconductor layer is opposite to that of the first doped semiconductor layer. According to the method, the photoelectric conversion efficiency of the heterojunction battery is improved.
Description
technical field [0001] The invention relates to the field of semiconductors, in particular to a heterojunction battery and a preparation method thereof. Background technique [0002] A solar cell is a device that directly converts solar radiation energy into electrical energy through the photoelectric effect by absorbing sunlight. Solar cells are a kind of clean energy cells, which are widely used in life and production. Heterojunction with intrinsic Thinlayer (HJT) solar cell is an important solar cell. The heterojunction cell structure is centered on the N-type silicon substrate, and the P-type amorphous silicon and N-type amorphous silicon and A layer of intrinsic amorphous silicon thin film is added between the N-type silicon substrates. After taking this process measure, the performance of the PN junction is improved, thereby improving the conversion efficiency of the heterojunction solar cell. In addition, heterojunction solar cells have the characteristics of good t...
Claims
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IPC IPC(8): H01L31/0236H01L31/0216H01L31/0747H01L31/20
CPCH01L31/02366H01L31/02167H01L31/202H01L31/208H01L31/0747Y02P70/50Y02E10/50
Inventor 周肃魏文文张良龚道仁王文静徐晓华庄挺挺
Owner ANHUI HUASUN ENERGY CO LTD