Ceramic substrate patterned structure and manufacturing method thereof

A technology of ceramic substrate and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device parts, semiconductor devices, etc., can solve problems such as incomplete etching, poor stability, product corrosion, etc., and achieve the copper surface state of the product Good, reduce copper surface roughness, long service life

Pending Publication Date: 2021-10-08
绍兴德汇半导体材料有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Aiming at the deficiencies of the prior art, the present invention provides a ceramic substrate patterned structure and its manufacturing method, which solves the difficulties in making the pattern of the existing ceramic

Method used

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  • Ceramic substrate patterned structure and manufacturing method thereof
  • Ceramic substrate patterned structure and manufacturing method thereof
  • Ceramic substrate patterned structure and manufacturing method thereof

Examples

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[0041] Example 1

[0042] see Figure 1-4 , the present invention provides the following technical solutions: a patterned structure of a ceramic substrate, comprising a ceramic substrate 1, a bonding layer 2, a solder layer 3 and a copper-platinum layer 4, the bonding layer 2, the solder layer 3 and the copper-platinum layer 4 from the inside to the outside The upper and lower surfaces of the ceramic substrate 1 are sequentially attached. The ceramic substrate 1, the bonding layer 2, the solder layer 3 and the copper-platinum 4 are manufactured by the active brazing method. The copper-clad ceramic substrate is exposed and developed by etching. The copper-clad ceramic substrate is etched with liquid to form a patterned structure of the ceramic substrate. The ceramic substrate 1 is nitride ceramic or oxide ceramic, and the solder layer 3 is composed of Ag, Cu and Ti components, and the Ag content is more than 70%. , the rest are Cu and Ti, the etching solution contains hydrogen...

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Abstract

The invention belongs to the technical field of power semiconductor production, and particularly relates to a ceramic substrate patterned structure and a manufacturing method thereof. The ceramic substrate patterned structure comprises a ceramic substrate, a bonding layer, a solder layer and copper platinum, and the bonding layer, the solder layer and the copper platinum layer are sequentially attached to the upper surface and the lower surface of the ceramic substrate from inside to outside; and the ceramic substrate, the bonding layer, the solder layer and copper platinum are manufactured into a copper-clad ceramic substrate through an active brazing method, the copper-clad ceramic substrate is etched through an etching solution in an exposure and development mode to form a patterned structure of the ceramic substrate, and the ceramic substrate is nitride ceramic or oxide ceramic. The ceramic copper-clad plate can be patterned, an unwanted copper layer is removed through chemical polishing treatment, the copper surface roughness is reduced, and the method has the advantages that the service cycle is long, stability is good, etching is sufficient, the etching liquid does not contain phosphorus, and the copper surface state of a product is good.

Description

technical field [0001] The invention relates to the technical field of power semiconductor production, in particular to a ceramic substrate patterned structure and a manufacturing method thereof. Background technique [0002] High-power semiconductor modules are widely used in electric locomotives, electric vehicles, photovoltaic solar energy and other fields. As high-power modules become more integrated and use more power, the heat generated by semiconductor devices is on the rise. At present, the method of sintering metals with excellent electrical and thermal conductivity and ceramics such as nitrides with good insulating properties to form ceramic circuit boards has been widely used in power semiconductors to solve the heat dissipation problem of power semiconductor devices. [0003] At present, there are mainly two methods for joining ceramics and metals, direct joining and active brazing. The direct bonding method refers to a method of directly bonding metal and cera...

Claims

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Application Information

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IPC IPC(8): H01L23/498H01L21/48
CPCH01L23/49811H01L23/49894H01L21/4846H01L23/49838
Inventor 朱德权徐荣军黄世东季玮王海龙
Owner 绍兴德汇半导体材料有限公司
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