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Preparation method of heterojunction solar cell

A solar cell and heterojunction technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low photoelectric conversion efficiency, and achieve the effects of improving photoelectric conversion efficiency, improving film quality, and reducing absorption

Active Publication Date: 2021-10-15
ANHUI HUASUN ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the shortcoming of low photoelectric conversion efficiency of existing heterojunction solar cells, thereby providing a preparation method of heterojunction solar cells

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  • Preparation method of heterojunction solar cell
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  • Preparation method of heterojunction solar cell

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Embodiment Construction

[0051] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0052] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "inner", "outer" and the like are based on the orientation or positional relationship shown in the accompanying drawings, and are only for It is convenient to describe the present invention and simplify the description, but does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a ...

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Abstract

The invention provides a preparation method of a heterojunction solar cell. The preparation method comprises the following steps: providing a semiconductor substrate layer; forming doped semiconductor layers on the two sides of the semiconductor substrate layer respectively; and performing plasma treatment on the doped semiconductor layer on at least one side of the semiconductor substrate layer to passivate the grain boundary defect of the doped semiconductor layer. The doped semiconductor layer on at least one side of the semiconductor substrate layer is subjected to plasma treatment, the grain boundary defects of the doped semiconductor layer are passivated, the interface state density of the film layer is improved, the doped semiconductor layer has few grain boundary defects and high crystallization rate, and the photoelectric conversion efficiency of the heterojunction cell is improved.

Description

technical field [0001] The invention relates to the technical field of heterojunction solar cells, in particular to a method for preparing heterojunction solar cells. Background technique [0002] As a new type of solar cell, heterojunction solar cells have broad market prospects due to their simple structure, few process steps, wide sources of raw materials, low production costs, and easy mass production. In the prior art, amorphous silicon thin film is one of the core raw materials of solar cells. [0003] In the existing preparation technology, the semiconductor layer obtained by the heterojunction solar cell has more grain boundary defects, relatively thick layer thickness and poor crystallization rate, which will bring more parasitic absorption and reduce the short-circuit current of the battery. Furthermore, due to the poor crystallization rate of the prepared semiconductor layer, the low conductivity of the film layer will increase the series internal resistance of t...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/20
CPCH01L31/18H01L31/186H01L31/1868H01L31/20H01L31/208Y02E10/50Y02P70/50
Inventor 龚道仁辛科周肃徐晓华王文静梅志纲程尚之李晨
Owner ANHUI HUASUN ENERGY CO LTD
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