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Crystal pulling method

A single crystal, continuous pulling technology, applied in the field of solar photovoltaics, can solve the problem of complex operation of oxygen content in single crystal silicon rods, and achieve the effects of reducing oxygen content, improving heat utilization, and reducing solubility

Pending Publication Date: 2021-10-22
LONGI GREEN ENERGY TECH CO LTD
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Problems solved by technology

[0004] The invention provides a crystal pulling method, aiming to solve the problem of complex operation of reducing the oxygen content of single crystal silicon rods in the Czochralski method

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Embodiment Construction

[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0036] The embodiment of the present invention is applied in a thermal field, and a heat shield and a heater are arranged in the thermal field. refer to figure 1 , figure 1 A partial schematic diagram of a thermal field in an embodiment of the present invention is shown. figure 1 Among them, 103 is a heat shield, and 104 is a heater. refer to figure 2 , figure 2 A flow chart of the first crystal pulling method in the embodiment of the present in...

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Abstract

The invention provides a crystal pulling method, and relates to the technical field of solar photovoltaics. The device is applied to a thermal field, and a thermal shield and a heater are arranged in the thermal field. After material melting is finished, the relative distance between the bottom of the heat shield and the upper surface of the heater is adjusted to a first preset distance; wherein the first preset distance is smaller than or equal to the maximum distance of the relative distance between the bottom of the heat shield and the upper surface of the heater; and the crystal is drawn to a first preset length; in the process of pulling the crystal from the first preset length to a second preset length, the relative distance is adjusted to a second preset distance; the first preset distance is greater than or equal to the second preset distance; under the condition that the relative distance is smaller than or equal to the first preset distance, crystal pulling continues on the basis of the second preset length, and the single crystal is obtained. By adjusting the distance between the heat shield and the heater, the solubility of oxygen is reduced, and the oxygen content of the single crystal is reduced, so that the operation is convenient, and the universality is very high.

Description

technical field [0001] The invention relates to the field of solar photovoltaic technology, in particular to a crystal pulling method. Background technique [0002] At present, the commonly used production process of monocrystalline silicon is the Czochralski method. The monocrystalline silicon rods obtained by the Czochralski method often have a high oxygen content, which will affect the photoelectric conversion efficiency of silicon solar cells. [0003] At present, the commonly used methods to reduce the oxygen content of single crystal silicon rods in the Czochralski method are to change the crystal rotor and crucible rotor, adjust the pressure of the protective gas, and increase the size of the guide tube. The above-mentioned methods are generally more complicated to operate. Contents of the invention [0004] The invention provides a crystal pulling method, aiming at solving the problem of complicated operations for reducing the oxygen content of single crystal sil...

Claims

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Application Information

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IPC IPC(8): C30B15/14C30B15/20C30B29/06
CPCC30B15/14C30B15/20C30B29/06
Inventor 杜婷婷张骏凯付楠楠邓浩张伟建董升
Owner LONGI GREEN ENERGY TECH CO LTD
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