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MEMS sensing device and preparation method thereof, and sensing detection circuit

A technology for detecting circuits and sensing devices, applied in the field of sensors, can solve problems such as sensitivity reduction of MEMS sensor devices, and achieve the effect of avoiding sensitivity reduction and output voltage reduction.

Pending Publication Date: 2021-10-22
FATRI UNITED TESTING & CONTROL QUANZHOU TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, the technical problem to be solved in the present invention is how to effectively avoid the sensitivity reduction of MEMS sensor devices in high temperature working environment

Method used

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  • MEMS sensing device and preparation method thereof, and sensing detection circuit
  • MEMS sensing device and preparation method thereof, and sensing detection circuit
  • MEMS sensing device and preparation method thereof, and sensing detection circuit

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Embodiment 2

[0109] like Figure 7 As shown, the invention also provides a sensing detection circuit including: a voltage dividing resistor RP and a detection module.

[0110] The detecting module includes a sensing resistor that connects the partial resistor RP, the detection module to the voltage resistor RP in series. The resistance temperature coefficient of the sensing resistance is greater than the resistance temperature coefficient of the voltage resistance Rp.

[0111] In one embodiment, the sensing resistance has a positive resistance temperature coefficient having a positive resistance temperature coefficient, and the resistance temperature coefficient of the sensing resistor is greater than the resistance temperature coefficient of the voltage resistance.

[0112] In another embodiment, the sensing resistance has a positive resistance temperature coefficient having a negative resistance temperature coefficient.

[0113] In yet another embodiment, the sensing resistance has a negative...

Embodiment 3

[0117] The present invention also provides a method of preparing a MEMS sensor device, comprising: making a substrate layer 101 and a detecting circuit layer 102 on the substrate layer 101, the detecting circuit layer 102 comprising a sensing resistance layer 1021; The substrate layer 101 is prepared on the substrate layer 101, and the voltage resistor doped layer 104 is connected in series with the detecting circuit layer 102. The resistance temperature coefficient of the sensing resistance layer 102 is greater than the resistance temperature coefficient of the voltage resistance doped layer 104.

[0118] The sensing resistance layer 1021 has a positive resistance temperature coefficient having a positive resistance temperature coefficient, and the resistance temperature coefficient of the sensing resistance layer 1021 is greater than the voltage resistor doped layer 104. The resistance temperature coefficient; or the sensing resistance layer 1021 has a positive resistance temper...

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Abstract

The invention provides an MEMS sensing device, a preparation method thereof and a sensing detection circuit, the MEMS sensing device comprises a substrate layer, a detection circuit layer and a divider resistance doping layer, the detection circuit layer comprises a sensing resistance layer, and the divider resistance doping layer is connected in series with the detection circuit layer. And the resistance temperature coefficient of the sensing resistance layer is greater than that of the divider resistance doping layer, so that the input voltage of the detection circuit layer is positively correlated with the temperature. When the temperature rises, the input voltage of the detection circuit layer is increased, the increase amount generated by the input voltage of the detection circuit layer compensates the trend that the piezoelectric effect of the detection circuit layer is weakened along with the temperature rise, and finally the output voltage of the MEMS sensor device can be effectively prevented from being reduced at high temperature, and the reduction of the sensitivity of the MEMS sensing device is effectively avoided at high temperature.

Description

Technical field [0001] The present invention relates to the field of sensors, and more particularly to a MEMS sensor device and a preparation method thereof, a sensing detection circuit. Background technique [0002] MEMS (microcomputer system) pressure sensor is the earliest micro-sensor developed, and the current application area has covered all aspects of people's daily production. The core device in the MEMS sensor is the MEMS sensitive chip in which the MEMS sensitive chip includes a dielectric MEMS pressure sensitive chip. [0003] The dielectric MEMS pressure sensitive chip is prepared based on the dielectric resistance effect, and its advantages are prepared by the semiconductor process, and the consistency of small volume and mass production is good. The dielectric effect is that the resistance resistance value changes in stress. The output voltage change produced under the variation of the dielectric MEMS pressure sensitive chip is sensitivity. Sensitivity is the most b...

Claims

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Application Information

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IPC IPC(8): G01L1/18B81B7/02B81C1/00
CPCG01L1/18B81B7/02B81C1/00134B81B2201/0264
Inventor 聂泳忠李舜华李腾跃吴桂珊杨文奇
Owner FATRI UNITED TESTING & CONTROL QUANZHOU TECH CO LTD