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Regulation and control method of quantum well and quantum dot material energy band structure

A technology of quantum dot material and energy band structure, applied in nanotechnology for materials and surface science, sustainable manufacturing/processing, electrical components, etc., can solve problems such as high cost and low production efficiency, and improve production efficiency , cost reduction, and significant application prospects

Pending Publication Date: 2021-11-02
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the growth of quantum well and quantum dot materials often requires a high vacuum environment and expensive equipment, and the growth rate is only one atomic layer per second, the cost of obtaining quantum well and quantum dot materials with multiple wavelength responses is very high. At the same time, the production efficiency is low

Method used

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  • Regulation and control method of quantum well and quantum dot material energy band structure
  • Regulation and control method of quantum well and quantum dot material energy band structure
  • Regulation and control method of quantum well and quantum dot material energy band structure

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Embodiment 1

[0041]A method for regulating the energy band structure of a quantum well and a quantum dot material in this embodiment comprises the following steps:

[0042] Step 1, using molecular beam epitaxy to grow the sacrificial layer AlAs (30nm) and the stress-introducing layer In in sequence on the GaAs substrate 0.2 al 0.2 Ga 0.6 As(20nm) and quantum well material GaAs(6.5nm) / Al 0.26 Ga 0.74 Quantum structure thin film functional layer composed of As (30nm).

[0043] Step 2: Etching the rectangular opening area of ​​the sacrificial layer by photolithography, using citric acid, hydrogen peroxide mixed solution (6:1) and hydrofluoric acid (10%) to etch alternately to etch the stress introducing layer and the functional layer of the quantum structure film to the sacrificial layer.

[0044] The hydrogen peroxide mixed solution is obtained by mixing citric acid solution obtained from citric acid powder and water at a ratio of 1:1 and 30% hydrogen peroxide at a ratio of 6:1.

[004...

Embodiment 2

[0054] A method for regulating the energy band structure of a quantum well and a quantum dot material in this embodiment comprises the following steps:

[0055] Step 1, grow the buffer layer n sequentially on the Si substrate using molecular beam epitaxy + GaAs (10nm), sacrificial layer AlAs (20nm), stress layer In 0.2 al 0.2 Ga 0.6 As(20nm) and quantum well material GaAs(6.5nm) / Al 0.26 Ga 0.74 Quantum structure thin film functional layer composed of As (30nm).

[0056] Step 2: Etching the rectangular opening area of ​​the sacrificial layer by photolithography, using citric acid, hydrogen peroxide mixed solution (6:1) and hydrofluoric acid (10%) to etch alternately to etch the stress introducing layer and the functional layer of the quantum structure film to the sacrificial layer.

[0057] Step 3, use hydrofluoric acid (5%) to corrode part of the sacrificial layer through the rectangular opening area, release the stress introduction layer and the quantum structure thin f...

Embodiment 3

[0060] A method for regulating the energy band structure of a quantum well and a quantum dot material in this embodiment comprises the following steps:

[0061] Step 1, using molecular beam epitaxy to grow the sacrificial layer AlAs (30nm) and the stress layer In in sequence on the Si substrate 0.2 al 0.2 Ga 0.6 Quantum structure thin film functional layer composed of As (10nm) and quantum dot material InP.

[0062] Step 2: Etching the rectangular opening area of ​​the sacrificial layer by photolithography, using citric acid, hydrogen peroxide mixed solution (6:1) and hydrofluoric acid (10%) to etch alternately to etch the stress introducing layer and the functional layer of the quantum structure film to the sacrificial layer.

[0063] Step 3, use hydrofluoric acid (5%) to corrode part of the sacrificial layer through the rectangular opening area, release the stress introduction layer and the quantum structure thin film functional layer, and after prestress release, the str...

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Abstract

The invention provides a regulation and control method of a quantum well and quantum dot material energy band structure. The regulation and control method comprises the following steps: step 1, sequentially growing a sacrificial layer, a stress introduction layer and a quantum structure film functional layer on a substrate by using a vacuum deposition method; step 2, etching the stress introduction layer and the quantum structure film function layer to the sacrificial layer by using wet etching or dry etching through photoetching an opening area of the sacrificial layer; step 3, corroding a part of the sacrificial layer through the opening area by using a chemical method, releasing the stress introduction layer and the quantum structure film functional layer, and forming a curled structure or a folded structure by the stress introduction layer and the quantum structure film functional layer through prestress release; and step 4, preserving the device with the curled structure or the folded structure by using a supercritical drying method. The quantum structure film functional layer is made of a quantum well material or a quantum dot material, and in the step 3, different curled structures or folded structures are obtained through different corrosion parameters.

Description

technical field [0001] The invention belongs to the field of low-dimensional materials, and in particular relates to a method for regulating and controlling energy band structures of quantum wells and quantum dot materials. Background technique [0002] In recent years, multi-wavelength detection and hyperspectral imaging technologies have gradually emerged. Unlike traditional photodetectors that only target a certain wavelength or a certain band of detection, these emerging detection technologies require more complete spectral information, which can improve the detector The level of integration improves the quality and accuracy of detection and imaging, and improves the accuracy of material composition detection. It has huge advantages in environmental detection, mineral analysis, agriculture, medical and aerospace detectors. To simultaneously detect optical models of different wavelengths in a photoelectric detection system, the underlying functional materials are required...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0216H01L31/0352B82Y30/00B82Y40/00
CPCH01L31/1844H01L31/0216H01L31/02161H01L31/035218H01L31/035209H01L31/035281H01L31/03529B82Y30/00B82Y40/00Y02P70/50
Inventor 黄高山尤淳瑜张飞梅永丰
Owner FUDAN UNIV
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