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A High Linearity Bias Circuit Applied to RF Amplifier

A radio frequency amplifier, bias circuit technology, applied in the direction of improving amplifiers to reduce nonlinear distortion, amplifiers, and components of amplifying devices, etc. The effect of small influence on other performance, small resistance parasitic parameters, and fast response speed

Active Publication Date: 2022-01-04
杭州中科微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims to overcome the problems of large performance impact, power frequency offset and signal distortion introduced by the compensation circuit in the prior art, and provides a high linearity bias circuit applied to radio frequency amplifiers, by monitoring the output signal amplitude of the radio frequency amplifier , automatically adjust the bias voltage of the bias circuit and then increase the bias voltage when processing high-power signals, and compensate the power gain to improve the linearity of the RF amplifier, which can realize full chip integration, simple circuit structure, fast response speed, and small parasitic parameters , has little effect on the performance of the core circuit of the power amplifier

Method used

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  • A High Linearity Bias Circuit Applied to RF Amplifier
  • A High Linearity Bias Circuit Applied to RF Amplifier
  • A High Linearity Bias Circuit Applied to RF Amplifier

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Embodiment

[0046] This embodiment provides a highly linear bias circuit applied to radio frequency amplifiers, the main function is to provide a bias voltage for the radio frequency amplifier transistor in the radio frequency amplifier, and at the same time automatically adjust the bias voltage according to the size of the input and output radio frequency signals size to improve the linearity of the RF amplifier.

[0047] figure 1 Shown is a schematic diagram of the topological structure of a single-stage radio frequency amplifier. This embodiment mainly corresponds to the high linearity bias circuit 1 in the schematic diagram of the topology structure. As shown in the figure, the high linearity bias circuit 1 collects and outputs a radio frequency signal RFfeedback that matches 3, and then After internal processing, the bias voltage signal V BIAS , is commonly connected with the input match 2 control transistor M 0 The gate of the control transistor M 0 The DC working state of the tr...

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Abstract

The invention discloses a high linearity bias circuit applied to a radio frequency amplifier, which overcomes the problems of large performance impact, power frequency offset and signal distortion introduced by the compensation circuit in the prior art, including an output signal power acquisition and conversion circuit, A reference current control circuit and a bias voltage generation circuit; the reference current control circuit is respectively connected with the output signal power acquisition and conversion circuit and the bias circuit generation circuit. The present invention automatically adjusts the bias voltage of the bias circuit by monitoring the output signal amplitude of the radio frequency amplifier, thereby increasing the bias voltage when processing high-power signals, and compensating for the power gain to improve the linearity of the radio frequency amplifier, and can realize full chip integration and circuit The structure is simple, the response speed is fast, the parasitic parameters are small, and the performance of the core circuit of the power amplifier is small.

Description

technical field [0001] The invention relates to the communication field of radio frequency integrated circuits, in particular to a high linearity bias circuit applied to radio frequency amplifiers. Background technique [0002] RF amplifiers used in RF communications mainly include low noise amplifiers and power amplifiers. The RF amplifier is an important part of the RF front-end in the modern communication module. All communication modules with signal receiving or transmitting functions need the RF amplifier to amplify the signal after receiving it or amplify it before transmitting it. With the development of modern communication technology, the demand for RF amplifiers is increasing. At the same time, according to different application requirements, the development of RF amplifiers with different performance requirements is getting faster and faster. For low-noise amplifiers, high linearity represents the ability of the receiver to process large signals and the ability t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/32H03F3/193
CPCH03F1/3205H03F3/193
Inventor 罗彦彬陈妙萍金玉花钱敏甘业兵
Owner 杭州中科微电子有限公司
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