A self-dressing grinding wheel for semiconductor material processing and its preparation method and application
A material processing and self-dressing technology, which is applied in metal processing equipment, bonded grinding wheels, abrasives, etc., can solve the problems of low grinding stability, difficulty in synchronous sintering, and difficulty in realization, achieving high preparation efficiency and easy industrial production , The effect of simple preparation method
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Embodiment 1
[0036] Embodiment 1, a kind of self-dressing grinding wheel for semiconductor material processing, such as figure 1As shown, it includes a grinding wheel base 1 and an abrasive layer, the abrasive layer includes a metal-based bond sector 2 and a composite material layer 3, the metal-based bond sector 2 is annularly arranged on the grinding wheel base 1, and the composite material layer 3 is arranged on the metal base In the through hole 4 on the bonding agent sector block 2 . When using the self-dressing grinding wheel for semiconductor material processing, firstly, the metal-based bond sector 2 ensures the grinding strength of the grinding wheel, and plays the role of grinding and support; The hole 4 is filled with the composite material layer 3. The strength of the composite material layer 3 is lower than that of the metal-based binder sector block 2. During the grinding process, the composite material layer 3 falls off from the through hole 4 and is dispersed and distribute...
Embodiment 2
[0051] Embodiment 2, a preparation method for preparing the above-mentioned self-dressing grinding wheel for semiconductor material processing in this embodiment, such as image 3 shown, including the following steps:
[0052] S1. Put tin powder, titanium powder, ferric oxide, organic pore-forming agent, diamond and copper powder into a mixer and mix evenly to obtain a mixture. Specifically, the raw materials for the preparation of the metal-based binder segment 2 are selected. In this embodiment, the mass percentage of tin powder is 25%, the mass percentage of titanium powder is 10%, the mass percentage of ferric oxide is 5%, and the organic The mass percentage of pore-forming agent is 5%, the mass percentage of diamond is 5%, and the mass percentage of copper powder is 50%. 43~48μm, the organic pore-forming agent selects polystyrene microspheres (PS microspheres), the particle size of the organic pore-forming agent is 80~100μm, and the raw materials are loaded into a three-...
Embodiment 3
[0061] Embodiment 3, a preparation method of a self-dressing grinding wheel for semiconductor material processing, the difference between this embodiment and Embodiment 2 is that in step S1 of this embodiment, the mass percentage of tin powder is 40%, and the mass percentage of titanium powder is 40%. The percentage is 6%, the mass percentage of ferric oxide is 3%, the mass percentage of organic pore-forming agent is 2%, the mass percentage of diamond is 4%, the mass percentage of copper powder is 45%, and the diamond particle size is 5~ 10 μm, the organic pore-forming agent is polymethyl methacrylate (PMMA), the particle size of the organic pore-forming agent is 7-14 μm, and the total mixing time is 3 hours; in step S2, the sintering temperature is 520 ° C, and the sintering pressure is is 180MPa, and the area of the through hole 4 accounts for 40% of the total area of the end face of the metal-based binder sector 2; in step S4, the CaSO 4 ·H 2The mass percentage of O po...
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Abstract
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