Self-dressing grinding wheel for semiconductor material machining as well as preparation method and application of self-dressing grinding wheel
A material processing and self-dressing technology, which is applied in metal processing equipment, bonded grinding wheels, abrasives, etc., can solve the problems of low grinding stability, difficulty in synchronous sintering, and difficulty in realization, achieving high preparation efficiency and easy industrial production , the effect of simple preparation method
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Embodiment 1
[0036] Embodiment 1, a kind of self-dressing grinding wheel for semiconductor material processing, such as figure 1As shown, it includes a grinding wheel matrix 1 and an abrasive layer. The abrasive layer includes a metal matrix bond sector 2 and a composite material layer 3. The metal matrix bond sector 2 is annularly arranged on the grinding wheel matrix 1, and the composite material layer 3 is arranged on the metal matrix. In the through hole 4 on the sector block 2 of the bonding agent. When using the self-dressing grinding wheel for semiconductor material processing, firstly, the metal-based bond segment 2 ensures the grinding strength of the grinding wheel, and plays the role of grinding and support; The hole 4 is filled with a composite material layer 3. The strength of the composite material layer 3 is lower than that of the metal-based binder sector 2. During the grinding process, it falls off from the through hole 4 and spreads to the grinding surface, which acts lik...
Embodiment 2
[0051] Embodiment 2, a kind of preparation method of the above-mentioned semiconductor material processing self-dressing grinding wheel of this embodiment, such as image 3 shown, including the following steps:
[0052] S1. Put tin powder, titanium powder, ferric oxide, organic pore-forming agent, diamond and copper powder into a mixer and mix them evenly to obtain a mixture. Specifically, the raw materials for the preparation of the metal-based binder sector 2 are selected. In this embodiment, the mass percentage of tin powder is 25%, the mass percentage of titanium powder is 10%, the mass percentage of ferroferric oxide is 5%, organic The mass percentage of pore-forming agent is 5%, the mass percentage of diamond is 5%, the mass percentage of copper powder is 50%, the median particle size of tin powder, titanium powder and ferric oxide is all ≤10μm, and the diamond particle size is 43~48μm, polystyrene microspheres (PS microspheres) are selected as the organic pore-forming ...
Embodiment 3
[0061] Embodiment 3, a method for preparing a self-dressing grinding wheel for processing semiconductor materials. The difference between this embodiment and Embodiment 2 is that in step S1 of this embodiment, the mass percentage of tin powder is 40%, and the mass percentage of titanium powder The percentage is 6%, the mass percentage of ferroferric oxide is 3%, the mass percentage of organic pore-forming agent is 2%, the mass percentage of diamond is 4%, the mass percentage of copper powder is 45%, and the diamond particle size is 5~ 10 μm, the organic pore-forming agent is polymethyl methacrylate (PMMA), the particle size of the organic pore-forming agent is 7-14 μm, and the total mixing time is 3 hours; in step S2, the sintering temperature is 520°C, and the sintering pressure is is 180MPa, the area of the through hole 4 accounts for 40% of the total area of the end face of the metal-based binder fan-shaped block 2; in step S4, CaSO 4 ·H 2The mass percentage of O powde...
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Abstract
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