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Groove morphology monitoring method and structural device

A groove and shape technology, which is applied in the manufacture of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of inability to monitor the groove sidewall and corner shape, and achieve easy versatility, timely judgment, The effect of accurate test results

Pending Publication Date: 2021-11-12
TIANJIN HUANXIN TECH DEV
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  • Claims
  • Application Information

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Problems solved by technology

[0003] The invention provides a method for monitoring the groove shape and a structural device that is easy to monitor the groove shape, and solves the technical problem that the groove side wall and corner shape cannot be monitored in the prior art

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  • Groove morphology monitoring method and structural device
  • Groove morphology monitoring method and structural device
  • Groove morphology monitoring method and structural device

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Embodiment Construction

[0052] The invention will be described in detail below with reference to the accompanying drawings and specific examples.

[0053] The present embodiment provides a method of monitoring trench morphology, the processes figure 1 Shown, each step of the device structure shown in Figure 2, in particular, the steps comprising:

[0054] S1, on the front side of the substrate 10 made of silicon trench 40 and groove 40 on the inside surface of the oxide layer 50 grown oxide layer.

[0055] S11, the silicon substrate 10 on the front side masking layer 20 of oxide growth.

[0056] like Figure 2A , The silicon substrate 10 on the front side of a single layer or multilayer growth of the oxidation mask layer 20, masking layer 20 is typically silicon oxide, silicon nitride, or other dielectric film is formed, and a mask layer 50 fully covering the substrate 10 is provided, and the thickness of the mask layer 20 is 1000-10000A; masking layer 20 may be provided to facilitate the etching of trenc...

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Abstract

The invention discloses a groove morphology monitoring method. The method comprises the following steps of manufacturing a groove on a substrate silicon wafer, and oxidizing and growing an oxide layer on the surface of the groove; manufacturing a first test electrode on the surface of the oxide layer; performing a voltage test between the first test electrode and a second test electrode prefabricated on the surface of one side, far away from the groove, of the substrate so as to measure a breakdown voltage value of the oxide layer; and comparing the measured breakdown voltage value of the oxide layer with the intrinsic breakdown voltage value of the oxide layer to judge whether the thickness of the oxide layer is uniform or not so as to judge whether the shape of the groove tightly attached to the oxide layer meets the standard or not. The invention also provides a structural device which is obtained by adopting the groove morphology monitoring method and is easy to monitor the groove morphology. According to the invention, the morphology condition of the groove can be indirectly judged only by testing the breakdown voltage of the oxide layer in the groove, the test result is accurate, the monitoring efficiency is high, and the reproduction detection rate is high too. And meanwhile, the groove obtained according to the monitoring method is stable in morphology and structure and is compatible with an actual production line process.

Description

Technical field [0001] The present invention belongs to the technical field trench etch process components, particularly to monitoring method for monitoring the trench sidewalls and the corner structure of the device and the morphology for easy monitoring of the morphology of the trench. Background technique [0002] A trench structure of the device is a lot of development direction of the device also gradually become the mainstream, such as MOS, SGT, IGBT, TrenchSBD the like, and is a key process of the device trench etching processing. Conventional trench etch process step or the optical instrument is often used to monitor the manner of a groove width and depth, the etched wafer periodically performed lobes, measurement of the trench cross-section by a scanning electron microscope; this process only at the time of the electrical properties of the product after processing is completed to confirm the trench sidewalls and corners morphology for problems; and to monitor the trench ...

Claims

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Application Information

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IPC IPC(8): H01L21/66H01L23/544H01L21/67
CPCH01L22/14H01L22/20H01L22/32H01L21/67253
Inventor 王万礼李长亮朱丽雅陈海洋
Owner TIANJIN HUANXIN TECH DEV