Formation method of semiconductor structure

Abstract

The embodiment of the invention provides a formation method of a semiconductor structure. The formation method comprises the following steps that: a substrate is provided; a gate function structure is formed on the substrate, wherein the gate function structure comprises a gate function layer or a plurality of gate function layers, the step of forming the gate function layer further comprises the following steps of forming a function material layer on the substrate, performing de-compounding treatment on the surface of the functional material layer to reduce charged ions captured by trap defects on the surface of the gate functional material layer, after the de-compounding treatment, passivating the surface of the gate function material layer to reduce trap defects on the surface of the gate function material layer; and a grid electrode is formed on the grid function structure. The de-compounding treatment and the passivating treatment can reduce the low-frequency noise of the formed semiconductor structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] As the integration level of semiconductor devices increases, the critical dimensions of transistors continue to shrink. However, as the size of the transistor decreases sharply, the thickness of the gate dielectric layer and the operating voltage cannot be changed accordingly, which makes it more difficult to suppress the short channel effect and increases the channel leakage current of the transistor. [0003] In order to adapt to the shrinking of transistor volume, high-k-metal gate transistors emerged as the times require. The high-k gate functional layer can increase the physical thickness of the gate dielectric layer while keeping the gate capacitance unchanged, so as to achieve the dual purposes of reducing gate leakage current and improving device reliability. [0004] Howev...

AI Technical Summary

Problems solved by technology

[0004] However, existing transistors suffer from severe low-frequency noise, which affects the electrical performance of the transistor

Images