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Composite power element and manufacturing method thereof

A power component and composite technology, which is used in semiconductor/solid-state device manufacturing, electrical components, and electrical solid-state devices. Effect

Pending Publication Date: 2021-11-26
CYSTECH ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this connection method between circuit elements and power elements will increase the complexity of product manufacturing and cannot effectively reduce the volume of the product

Method used

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  • Composite power element and manufacturing method thereof
  • Composite power element and manufacturing method thereof
  • Composite power element and manufacturing method thereof

Examples

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Effect test

no. 1 example

[0025] see Figure 1A to Figure 1H , figure 2 and image 3 As shown, the first embodiment of the present invention provides a method for manufacturing a composite power device 100 . The manufacturing method of the composite power element includes steps S110 to S180. in, Figure 1A to Figure 1H It is a schematic flow chart of the manufacturing method of the composite power element according to the first embodiment of the present invention, figure 2It is a schematic cross-sectional view of a composite power element according to the first embodiment of the present invention (indicates the equivalent circuit corresponding to the element structure), and image 3 It is an equivalent circuit diagram of the composite power element according to the first embodiment of the present invention.

[0026] It must be noted that the order of the steps and the actual operation method described in this embodiment can be adjusted according to the needs, and are not limited to the description...

no. 2 example

[0086] see Figure 4 and Figure 5 As shown, the second embodiment of the present invention also provides a composite power element 100'. Figure 4 is a partial schematic diagram of a composite power element according to the second embodiment of the present invention, and Figure 5 It is an equivalent circuit diagram of a composite power element according to the second embodiment of the present invention.

[0087] The structural design of the composite power element 100' of the second embodiment of the present invention is substantially the same as that of the above-mentioned first embodiment, except that the composite power element 100' of this embodiment has a plurality of conventional diodes 6 (V D1 to V DN ).

[0088] like Figure 4 As shown, more specifically, in this embodiment, the number of the conventional diodes 6 is multiple, and a plurality of the conventional diodes 6 (V D1 to V DN ) are arranged in series with each other on the cladding insulating layer 23...

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Abstract

The invention discloses a composite power device and a manufacturing method thereof. The power device comprises a substrate structure, an insulating layer, a dielectric layer, a metal-oxide-semiconductor field effect transistor and a Zener diode. The metal-oxide-semiconductor field effect transistor is formed in the transistor formation region of the substrate structure. The Zener diode is formed in the circuit element forming region of the substrate structure and includes a Zener diode doped structure formed on the insulating layer and covered by the dielectric layer. The Zener diode doped structure comprises a P-type doped region and an N-type doped region which are connected with each other. The Zener diode further comprises a Zener diode metal structure which is formed on the dielectric layer and partially penetrates through the dielectric layer so as to be electrically connected with the P-type doped region and the N-type doped region of the Zener diode doped structure. The Zener diode is configured to receive a reverse bias voltage when the composite power element is energized. Therefore, the process complexity of the composite power element can be simplified, and the size of a terminal product can also be reduced.

Description

technical field [0001] The invention relates to a power element, in particular to a composite power element and a manufacturing method thereof. Background technique [0002] In the existing power components, such as: metal oxide semiconductor field effect transistor (MOSFET), bipolar junction transistor (BJT), if it is necessary to add other circuit components (such as: resistors or Zener diodes) in the circuit design ) to form electronic circuits with specific functions, these circuit components need to be electrically connected to power components by welding. However, this connection method between the circuit element and the power element will increase the complexity of product manufacturing and cannot effectively reduce the volume of the product. [0003] Therefore, the present inventor feels that the above-mentioned defects can be improved, and Naite devoted himself to research and combined with the application of theories, and finally proposed an invention with a reas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/06H01L21/8249
CPCH01L27/0629H01L21/8249
Inventor 徐信佑王振煌洪世杰
Owner CYSTECH ELECTRONICS CORP