The invention discloses a
semiconductor structure and a forming method of the
semiconductor structure, and the
semiconductor structure comprises a substrate on which a plurality of
photoelectric conversion devices and power devices are formed;
deep trench isolation structures are arranged between the
photoelectric conversion devices and / or between the
photoelectric conversion devices and the power devices; the
deep trench isolation structure comprises a
deep trench, the deep trench is filled with a conductive material, and an
isolation layer is arranged between the conductive material and the inner wall of the deep trench; an opening is formed in the bottom of the
isolation layer, and the conductive material is filled in the opening and is in contact with the inner wall of the bottom of the deep trench; and the upper part of the conductive material in the deep groove is electrically connected with other circuits through a conductive structure, so that the inner wall of the bottom of the deep groove is electrically connected with the other circuits through the conductive material. By adopting the
semiconductor structure and the forming method of the
semiconductor structure, a device structure optimization scheme suitable for a photoelectric-power collaborative application
system can be provided, and the process steps are simplified.