The invention relates to the technical field of
monocrystalline silicon processing, particularly provides a preparation method of
monocrystalline silicon, and aims to solve the problem that the
crystal quality is influenced by
crystal distortion in the existing
monocrystalline silicon preparation process. In order to achieve the purpose, the preparation method of the monocrystalline
silicon comprises the steps that in the first stage of equal-
diameter growth of the monocrystalline
silicon, the
crystal pulling speed is controlled to be gradually increased to the preset pulling speed, and the liquid opening distance is controlled to be gradually reduced to the preset distance; and in the second stage of equal-
diameter growth of the monocrystalline
silicon, controlling the crystal pulling speed to maintain the preset pulling speed, and controlling the liquid opening distance to maintain the preset distance. According to the method, the two technological parameters of the liquid opening distance and the crystal pulling speed in the monocrystalline silicon growth process are adjusted in advance, the temperature consistency of the area nearby the
molten silicon liquid level can be improved, a stable thermal field is formed at the junction of the crystal and the silicon solution, and therefore the
distortion proportion of the crystal can be reduced, and the crystal forming quality is improved.