Manufacturing method of hollow nanotube structure

Abstract

The invention discloses a manufacturing method of a hollow nanotube structure, comprising the following steps: preparing a substrate; forming a crystal seed layer on the substrate first, then generating a nanowire with a predetermined dimension on the crystal seed layer at relatively low temperature by using hydrothermal method; forming an outer coating layer on the surface of the nanowire; selectively etching the top of the outer coating layer to expose the top of the nanowire; and removing the whole nanowire and keeping the hollow outer coating layer to form a plurality of hollow nanotubes. The method is beneficial to simplify the nanotube technology, improve the dimension precision of the nanotubes and improve the photoelectric properties of elements.

Description

technical field [0001] The invention relates to a manufacturing method of a hollow nanotube structure, in particular to a manufacturing method of forming a hollow nanotube structure by using a nanowire and an outer cladding layer. Background technique [0002] Nowadays, in order to meet the needs of micro-electromechanical components and sensing components, researchers continue to develop and improve various nanostructures, and apply suitable insulating materials (such as oxides), semiconductor materials or conductive materials to manufacture various nanowires (nanowire) or hollow nanotube (nanotube) structure, for example: using silicon dioxide SiO 2 , titanium dioxide TiO 2 , zinc oxide ZnO, indium phosphide InP, silicon Si, gallium nitride GaN, nickel Ni, platinum Pt or gold Au and other nanomaterials to make metal nanowires; on the other hand, carbon or silicon dioxide is also used to make hollow wires. nanotubes. The aforementioned nanowire or hollow nanotube structu...

AI Technical Summary

Problems solved by technology

However, due to the high cost of required equipment and the extremely complicated and time-consuming process technology involved in the conventional process, the production cost of hollow nanotubes is relatively high.

Furthermore, most of the conventional process methods must be carried out under high temperature environment, but this high temperature condition will greatly limit the development of process applications in the manufacture of MEMS components that are not resistant to high temperatures, and affect the difficulty of subsequent component fabrication and the optoelectronic characteristics of the components

In addition, many nanotube manufacturing methods directly use suitable nanomaterials to manufacture hollow nanotubes, but for some nanomaterials, it is impossible to directly form hollow nanotube structures, which will limit the application of these nanomaterials Development in the field of nanotubes

Images