Buffering layer of ternary nitride for nitride luminescent assembly and its production

Abstract

The invention consists of the base board, the ternary nitride buffer layer formed on the base board, the first conducting nitride semiconductor layer formed on the ternary nitride buffer layer, the luminescent layer formed on the first conducting nitride semiconductor layer, and the second conducting nitride semiconductor layer formed on the luminescent layer. The manufacturing method of the ternary nitride buffer layer is: at first preset temperature the first gas reaction source containing first group III element whose melting point is under the first preset temperature is put through; the group III element is deposited on the base board; at the second preset temperature the second gas reaction source containing group III element and the third gas reaction source containing nitride element are put through to make reaction with first group III element formed on the base board; the second preset temperature is not less than the melting point of first group III element.

Description

technical field [0001] The invention relates to a buffer layer of a light-emitting component and a manufacturing method thereof, in particular to a ternary nitride buffer layer of a nitride light-emitting component and a manufacturing method thereof. Background technique [0002] The development and application of nitride light-emitting components is quite extensive and extremely important. Its applications include sign light sources, electronic product backlight sources, outdoor full-color signage, white light lighting, ultraviolet light, and high-density laser applications. Whether this emerging application field can grow rapidly, the most urgent issues that need to be improved are brightness improvement, electrical properties, and improvement of epitaxial process stability. [0003] Most of the traditional nitride components form an AlGaInN series nitride buffer layer on a sapphire substrate, and then perform a nitride epitaxy process on this buffer layer; due to the prob...

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Problems solved by technology

[0003] Most of the traditional nitride components form an AlGaInN series nitride buffer layer on a sapphire substrate, and then perform a nitride epitaxy process on this buffer layer; due to the problem of lattice constant matching, even up to now, it is still unable to effectively reduce dislocations Density; it is generally believed that the density of dislocations has a considerable relationship with the quality of components. In order to improve the quality of nitride growth, the traditional nitride epitaxy process uses two-step growth, that is, at low temperature (500 ~ GaN at 600°C) is used as a buffer layer, and then undergoes a specific heating process and high temperature (1000-1200°C) treatment to crystallize (Crystallization), and then continue the epitaxial growth of each epitaxial stack

Since the quality of the buffer layer directly affects the subsequent epitaxial quality, hundreds of epitaxial parameters such as the thickness and temperature of the buffer layer, the recovery and recrystallization process of heating, the ratio and flow rate of various reaction gas flows must be carefully controlled, resulting in The complexity and difficulty of the process increase, coupled with the need to increase the growth temperature, low temperature switching, the time-consuming heating and cooling process and waiting for the temperature to stabilize, which virtually reduces the production efficiency

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